JPS5844735A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5844735A
JPS5844735A JP14238381A JP14238381A JPS5844735A JP S5844735 A JPS5844735 A JP S5844735A JP 14238381 A JP14238381 A JP 14238381A JP 14238381 A JP14238381 A JP 14238381A JP S5844735 A JPS5844735 A JP S5844735A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
groove
silicon
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14238381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6359538B2 (enrdf_load_stackoverflow
Inventor
Toshihiko Fukuyama
福山　敏彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14238381A priority Critical patent/JPS5844735A/ja
Publication of JPS5844735A publication Critical patent/JPS5844735A/ja
Publication of JPS6359538B2 publication Critical patent/JPS6359538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP14238381A 1981-09-11 1981-09-11 半導体装置の製造方法 Granted JPS5844735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14238381A JPS5844735A (ja) 1981-09-11 1981-09-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14238381A JPS5844735A (ja) 1981-09-11 1981-09-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5844735A true JPS5844735A (ja) 1983-03-15
JPS6359538B2 JPS6359538B2 (enrdf_load_stackoverflow) 1988-11-21

Family

ID=15314082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14238381A Granted JPS5844735A (ja) 1981-09-11 1981-09-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5844735A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611386A (en) * 1982-12-27 1986-09-16 Fujitsu Limited Method of producing a semiconductor device
EP0278159A3 (en) * 1986-11-19 1990-03-14 Plessey Overseas Limited Method of manufacturing a semiconductor device comprising an isolation structure
US5897360A (en) * 1996-10-21 1999-04-27 Nec Corporation Manufacturing method of semiconductor integrated circuit
KR100256813B1 (ko) * 1993-12-28 2000-05-15 김영환 반도체소자의 소자분리방법
JP2005051225A (ja) * 2003-07-10 2005-02-24 Internatl Rectifier Corp 半導体装置のための、ＳｉまたはＳｉＣ上に厚い酸化物を形成する方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611386A (en) * 1982-12-27 1986-09-16 Fujitsu Limited Method of producing a semiconductor device
EP0278159A3 (en) * 1986-11-19 1990-03-14 Plessey Overseas Limited Method of manufacturing a semiconductor device comprising an isolation structure
KR100256813B1 (ko) * 1993-12-28 2000-05-15 김영환 반도체소자의 소자분리방법
US5897360A (en) * 1996-10-21 1999-04-27 Nec Corporation Manufacturing method of semiconductor integrated circuit
JP2005051225A (ja) * 2003-07-10 2005-02-24 Internatl Rectifier Corp 半導体装置のための、ＳｉまたはＳｉＣ上に厚い酸化物を形成する方法

Also Published As

Publication number Publication date
JPS6359538B2 (enrdf_load_stackoverflow) 1988-11-21

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