JPS5834931B2 - ハンドウタイヘノフジユンブツドウニユウホウ - Google Patents

ハンドウタイヘノフジユンブツドウニユウホウ

Info

Publication number
JPS5834931B2
JPS5834931B2 JP50129646A JP12964675A JPS5834931B2 JP S5834931 B2 JPS5834931 B2 JP S5834931B2 JP 50129646 A JP50129646 A JP 50129646A JP 12964675 A JP12964675 A JP 12964675A JP S5834931 B2 JPS5834931 B2 JP S5834931B2
Authority
JP
Japan
Prior art keywords
axis
channeling
ions
semiconductor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50129646A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5253658A (en
Inventor
信道 岡崎
英雄 窪田
誠一 渡辺
靖夫 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50129646A priority Critical patent/JPS5834931B2/ja
Priority to FR7632651A priority patent/FR2330143A1/fr
Priority to DE19762649134 priority patent/DE2649134A1/de
Priority to NL7611983A priority patent/NL7611983A/xx
Publication of JPS5253658A publication Critical patent/JPS5253658A/ja
Publication of JPS5834931B2 publication Critical patent/JPS5834931B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Recrystallisation Techniques (AREA)
JP50129646A 1975-10-28 1975-10-28 ハンドウタイヘノフジユンブツドウニユウホウ Expired JPS5834931B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50129646A JPS5834931B2 (ja) 1975-10-28 1975-10-28 ハンドウタイヘノフジユンブツドウニユウホウ
FR7632651A FR2330143A1 (fr) 1975-10-28 1976-10-28 Procede d'implantation ionique pour la fabrication de semi-conducteurs
DE19762649134 DE2649134A1 (de) 1975-10-28 1976-10-28 Verfahren zur ionenimplantation in halbleitersubstrate
NL7611983A NL7611983A (nl) 1975-10-28 1976-10-28 Werkwijze voor de inplantatie van ionen.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129646A JPS5834931B2 (ja) 1975-10-28 1975-10-28 ハンドウタイヘノフジユンブツドウニユウホウ

Publications (2)

Publication Number Publication Date
JPS5253658A JPS5253658A (en) 1977-04-30
JPS5834931B2 true JPS5834931B2 (ja) 1983-07-29

Family

ID=15014653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50129646A Expired JPS5834931B2 (ja) 1975-10-28 1975-10-28 ハンドウタイヘノフジユンブツドウニユウホウ

Country Status (4)

Country Link
JP (1) JPS5834931B2 (Direct)
DE (1) DE2649134A1 (Direct)
FR (1) FR2330143A1 (Direct)
NL (1) NL7611983A (Direct)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01208388A (ja) * 1987-12-03 1989-08-22 Ireco Inc エマルジョン爆薬物の製造方法及び包装済みエマルジョン爆薬物

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2351082A1 (fr) * 1976-05-11 1977-12-09 Rhone Poulenc Ind Procede de fabrication d'acide terephtalique a partir de terephtalate dipotassique, realisation en deux etages
DE2833319C2 (de) * 1978-07-29 1982-10-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
JPS61178268U (Direct) * 1985-04-24 1986-11-07
JPH0831428B2 (ja) * 1985-06-20 1996-03-27 住友電気工業株式会社 結晶へのイオン注入方法
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード
EP1139434A3 (en) 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01208388A (ja) * 1987-12-03 1989-08-22 Ireco Inc エマルジョン爆薬物の製造方法及び包装済みエマルジョン爆薬物

Also Published As

Publication number Publication date
FR2330143B3 (Direct) 1979-07-13
DE2649134A1 (de) 1977-05-12
JPS5253658A (en) 1977-04-30
FR2330143A1 (fr) 1977-05-27
NL7611983A (nl) 1977-05-02

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