FR2330143A1 - Procede d'implantation ionique pour la fabrication de semi-conducteurs - Google Patents

Procede d'implantation ionique pour la fabrication de semi-conducteurs

Info

Publication number
FR2330143A1
FR2330143A1 FR7632651A FR7632651A FR2330143A1 FR 2330143 A1 FR2330143 A1 FR 2330143A1 FR 7632651 A FR7632651 A FR 7632651A FR 7632651 A FR7632651 A FR 7632651A FR 2330143 A1 FR2330143 A1 FR 2330143A1
Authority
FR
France
Prior art keywords
amorphous layer
semiconductors
manufacture
implantation process
impurity ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7632651A
Other languages
English (en)
French (fr)
Other versions
FR2330143B3 (Direct
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2330143A1 publication Critical patent/FR2330143A1/fr
Application granted granted Critical
Publication of FR2330143B3 publication Critical patent/FR2330143B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
FR7632651A 1975-10-28 1976-10-28 Procede d'implantation ionique pour la fabrication de semi-conducteurs Granted FR2330143A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129646A JPS5834931B2 (ja) 1975-10-28 1975-10-28 ハンドウタイヘノフジユンブツドウニユウホウ

Publications (2)

Publication Number Publication Date
FR2330143A1 true FR2330143A1 (fr) 1977-05-27
FR2330143B3 FR2330143B3 (Direct) 1979-07-13

Family

ID=15014653

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632651A Granted FR2330143A1 (fr) 1975-10-28 1976-10-28 Procede d'implantation ionique pour la fabrication de semi-conducteurs

Country Status (4)

Country Link
JP (1) JPS5834931B2 (Direct)
DE (1) DE2649134A1 (Direct)
FR (1) FR2330143A1 (Direct)
NL (1) NL7611983A (Direct)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435131A1 (fr) * 1978-07-29 1980-03-28 Philips Nv Diode capacitive
EP1139434A2 (en) 2000-03-29 2001-10-04 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2351082A1 (fr) * 1976-05-11 1977-12-09 Rhone Poulenc Ind Procede de fabrication d'acide terephtalique a partir de terephtalate dipotassique, realisation en deux etages
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
JPS61178268U (Direct) * 1985-04-24 1986-11-07
JPH0831428B2 (ja) * 1985-06-20 1996-03-27 住友電気工業株式会社 結晶へのイオン注入方法
US4790890A (en) * 1987-12-03 1988-12-13 Ireco Incorporated Packaged emulsion explosives and methods of manufacture thereof
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435131A1 (fr) * 1978-07-29 1980-03-28 Philips Nv Diode capacitive
EP1139434A2 (en) 2000-03-29 2001-10-04 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile
EP1139434A3 (en) * 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile

Also Published As

Publication number Publication date
FR2330143B3 (Direct) 1979-07-13
DE2649134A1 (de) 1977-05-12
JPS5253658A (en) 1977-04-30
JPS5834931B2 (ja) 1983-07-29
NL7611983A (nl) 1977-05-02

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