JPS5833714B2 - 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法 - Google Patents

砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法

Info

Publication number
JPS5833714B2
JPS5833714B2 JP6542874A JP6542874A JPS5833714B2 JP S5833714 B2 JPS5833714 B2 JP S5833714B2 JP 6542874 A JP6542874 A JP 6542874A JP 6542874 A JP6542874 A JP 6542874A JP S5833714 B2 JPS5833714 B2 JP S5833714B2
Authority
JP
Japan
Prior art keywords
metal film
gate
gallium arsenide
field effect
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6542874A
Other languages
English (en)
Japanese (ja)
Other versions
JPS50157078A (enrdf_load_stackoverflow
Inventor
正毅 小川
昌興 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6542874A priority Critical patent/JPS5833714B2/ja
Publication of JPS50157078A publication Critical patent/JPS50157078A/ja
Publication of JPS5833714B2 publication Critical patent/JPS5833714B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP6542874A 1974-06-07 1974-06-07 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法 Expired JPS5833714B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6542874A JPS5833714B2 (ja) 1974-06-07 1974-06-07 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6542874A JPS5833714B2 (ja) 1974-06-07 1974-06-07 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS50157078A JPS50157078A (enrdf_load_stackoverflow) 1975-12-18
JPS5833714B2 true JPS5833714B2 (ja) 1983-07-21

Family

ID=13286793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6542874A Expired JPS5833714B2 (ja) 1974-06-07 1974-06-07 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5833714B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123090A (ja) * 1974-08-20 1976-02-24 Matsushita Electronics Corp Setsugogeetogatadenkaikokatoranjisuta
JPS51115780A (en) * 1974-10-31 1976-10-12 Matsushita Electric Ind Co Ltd Hetero junction gate form fieid effect transistor and manufacturing me thod
JPS61216484A (ja) * 1985-03-22 1986-09-26 Mitsubishi Electric Corp 電界効果トランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4896289A (enrdf_load_stackoverflow) * 1972-03-24 1973-12-08
JPS4946874A (enrdf_load_stackoverflow) * 1972-09-11 1974-05-07

Also Published As

Publication number Publication date
JPS50157078A (enrdf_load_stackoverflow) 1975-12-18

Similar Documents

Publication Publication Date Title
US4377899A (en) Method of manufacturing Schottky field-effect transistors utilizing shadow masking
US4997779A (en) Method of making asymmetrical gate field effect transistor
JPS5833714B2 (ja) 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法
JPH08306708A (ja) 半導体装置およびその製造方法
JPS6222536B2 (enrdf_load_stackoverflow)
JPS5832513B2 (ja) 電界効果トランジスタの製造方法
JPS61240684A (ja) シヨツトキ−型電界効果トランジスタ及びその製造方法
JPS6057977A (ja) シヨツトキゲ−ト型電界効果トランジスタの製造方法
GB2064868A (en) Schottky barrier gate field-effect transistor
JPH0845962A (ja) 半導体装置の製造方法
JPS616870A (ja) 電界効果トランジスタの製造方法
JP2557432B2 (ja) 電界効果トランジスタ
JPS6310905B2 (enrdf_load_stackoverflow)
JPS61216487A (ja) 半導体装置の製造方法
JPH02262342A (ja) 半導体装置の製造方法
JPS6037173A (ja) 電界効果トランジスタの製造方法
JPH02156544A (ja) ＧａＡｓ　ＭＥＳＦＥＴの製造方法
JPS60776A (ja) 半導体装置の製造方法
JPH02180032A (ja) ＧａＡｓ　ＭＥＳＦＥＴの製造方法
JPH047101B2 (enrdf_load_stackoverflow)
JPS6161549B2 (enrdf_load_stackoverflow)
JPS6161550B2 (enrdf_load_stackoverflow)
JPH02285645A (ja) 半導体装置の製造方法
JPS59224178A (ja) 電界効果トランジスタの製造方法
JPH07120673B2 (ja) ショットキゲート電界効果トランジスタの製造方法