JPS50157078A - - Google Patents

Info

Publication number
JPS50157078A
JPS50157078A JP6542874A JP6542874A JPS50157078A JP S50157078 A JPS50157078 A JP S50157078A JP 6542874 A JP6542874 A JP 6542874A JP 6542874 A JP6542874 A JP 6542874A JP S50157078 A JPS50157078 A JP S50157078A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6542874A
Other languages
Japanese (ja)
Other versions
JPS5833714B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6542874A priority Critical patent/JPS5833714B2/ja
Publication of JPS50157078A publication Critical patent/JPS50157078A/ja
Publication of JPS5833714B2 publication Critical patent/JPS5833714B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP6542874A 1974-06-07 1974-06-07 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法 Expired JPS5833714B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6542874A JPS5833714B2 (ja) 1974-06-07 1974-06-07 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6542874A JPS5833714B2 (ja) 1974-06-07 1974-06-07 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS50157078A true JPS50157078A (enrdf_load_stackoverflow) 1975-12-18
JPS5833714B2 JPS5833714B2 (ja) 1983-07-21

Family

ID=13286793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6542874A Expired JPS5833714B2 (ja) 1974-06-07 1974-06-07 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5833714B2 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123090A (ja) * 1974-08-20 1976-02-24 Matsushita Electronics Corp Setsugogeetogatadenkaikokatoranjisuta
JPS51115780A (en) * 1974-10-31 1976-10-12 Matsushita Electric Ind Co Ltd Hetero junction gate form fieid effect transistor and manufacturing me thod
JPS61216484A (ja) * 1985-03-22 1986-09-26 Mitsubishi Electric Corp 電界効果トランジスタの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4896289A (enrdf_load_stackoverflow) * 1972-03-24 1973-12-08
JPS4946874A (enrdf_load_stackoverflow) * 1972-09-11 1974-05-07

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4896289A (enrdf_load_stackoverflow) * 1972-03-24 1973-12-08
JPS4946874A (enrdf_load_stackoverflow) * 1972-09-11 1974-05-07

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123090A (ja) * 1974-08-20 1976-02-24 Matsushita Electronics Corp Setsugogeetogatadenkaikokatoranjisuta
JPS51115780A (en) * 1974-10-31 1976-10-12 Matsushita Electric Ind Co Ltd Hetero junction gate form fieid effect transistor and manufacturing me thod
JPS61216484A (ja) * 1985-03-22 1986-09-26 Mitsubishi Electric Corp 電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPS5833714B2 (ja) 1983-07-21

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