JPS5831552A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5831552A
JPS5831552A JP56129521A JP12952181A JPS5831552A JP S5831552 A JPS5831552 A JP S5831552A JP 56129521 A JP56129521 A JP 56129521A JP 12952181 A JP12952181 A JP 12952181A JP S5831552 A JPS5831552 A JP S5831552A
Authority
JP
Japan
Prior art keywords
film
window
sio2
semiconductor device
sio2 film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56129521A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0420266B2 (enExample
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56129521A priority Critical patent/JPS5831552A/ja
Publication of JPS5831552A publication Critical patent/JPS5831552A/ja
Publication of JPH0420266B2 publication Critical patent/JPH0420266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP56129521A 1981-08-18 1981-08-18 半導体装置の製造方法 Granted JPS5831552A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56129521A JPS5831552A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56129521A JPS5831552A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5831552A true JPS5831552A (ja) 1983-02-24
JPH0420266B2 JPH0420266B2 (enExample) 1992-04-02

Family

ID=15011552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56129521A Granted JPS5831552A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5831552A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020531A (ja) * 1983-06-21 1985-02-01 ソシエテ・プール・レチユード・エ・ラ・フアブリカシオン・デ・シルキユイ・アンラグレ・スペシオー―ウ―・エフ・セー・イー・エス 半導体ウエハに絶縁半導体素子を製造する方法
JPS6038830A (ja) * 1983-08-12 1985-02-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5300448A (en) * 1991-02-01 1994-04-05 North American Philips Corporation High voltage thin film transistor having a linear doping profile and method for making

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019439A (enExample) * 1973-04-09 1975-02-28
JPS5673697A (en) * 1979-11-21 1981-06-18 Hitachi Ltd Manufacture of single crystal thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019439A (enExample) * 1973-04-09 1975-02-28
JPS5673697A (en) * 1979-11-21 1981-06-18 Hitachi Ltd Manufacture of single crystal thin film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020531A (ja) * 1983-06-21 1985-02-01 ソシエテ・プール・レチユード・エ・ラ・フアブリカシオン・デ・シルキユイ・アンラグレ・スペシオー―ウ―・エフ・セー・イー・エス 半導体ウエハに絶縁半導体素子を製造する方法
US5387537A (en) * 1983-06-21 1995-02-07 Soclete Pour I'etude Et Al Fabrication De Circuits Integres Speciaux E.F.C.I.S. Process for manufacturing isolated semiconductor components in a semiconductor wafer
US5457338A (en) * 1983-06-21 1995-10-10 Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux E.F.C.I.S. Process for manufacturing isolated semi conductor components in a semi conductor wafer
JPS6038830A (ja) * 1983-08-12 1985-02-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5300448A (en) * 1991-02-01 1994-04-05 North American Philips Corporation High voltage thin film transistor having a linear doping profile and method for making

Also Published As

Publication number Publication date
JPH0420266B2 (enExample) 1992-04-02

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