JPS5831552A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5831552A JPS5831552A JP12952181A JP12952181A JPS5831552A JP S5831552 A JPS5831552 A JP S5831552A JP 12952181 A JP12952181 A JP 12952181A JP 12952181 A JP12952181 A JP 12952181A JP S5831552 A JPS5831552 A JP S5831552A
- Authority
- JP
- Japan
- Prior art keywords
- film
- window
- sio2
- semiconductor device
- sio2 film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 14
- 229910052681 coesite Inorganic materials 0.000 abstract 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract 7
- 239000000377 silicon dioxide Substances 0.000 abstract 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract 7
- 229910052682 stishovite Inorganic materials 0.000 abstract 7
- 229910052905 tridymite Inorganic materials 0.000 abstract 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000270295 Serpentes Species 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12952181A JPS5831552A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12952181A JPS5831552A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5831552A true JPS5831552A (ja) | 1983-02-24 |
| JPH0420266B2 JPH0420266B2 (enrdf_load_stackoverflow) | 1992-04-02 |
Family
ID=15011552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12952181A Granted JPS5831552A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831552A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6020531A (ja) * | 1983-06-21 | 1985-02-01 | ソシエテ・プール・レチユード・エ・ラ・フアブリカシオン・デ・シルキユイ・アンラグレ・スペシオー―ウ―・エフ・セー・イー・エス | 半導体ウエハに絶縁半導体素子を製造する方法 |
| JPS6038830A (ja) * | 1983-08-12 | 1985-02-28 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US5300448A (en) * | 1991-02-01 | 1994-04-05 | North American Philips Corporation | High voltage thin film transistor having a linear doping profile and method for making |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5019439A (enrdf_load_stackoverflow) * | 1973-04-09 | 1975-02-28 | ||
| JPS5673697A (en) * | 1979-11-21 | 1981-06-18 | Hitachi Ltd | Manufacture of single crystal thin film |
-
1981
- 1981-08-18 JP JP12952181A patent/JPS5831552A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5019439A (enrdf_load_stackoverflow) * | 1973-04-09 | 1975-02-28 | ||
| JPS5673697A (en) * | 1979-11-21 | 1981-06-18 | Hitachi Ltd | Manufacture of single crystal thin film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6020531A (ja) * | 1983-06-21 | 1985-02-01 | ソシエテ・プール・レチユード・エ・ラ・フアブリカシオン・デ・シルキユイ・アンラグレ・スペシオー―ウ―・エフ・セー・イー・エス | 半導体ウエハに絶縁半導体素子を製造する方法 |
| US5387537A (en) * | 1983-06-21 | 1995-02-07 | Soclete Pour I'etude Et Al Fabrication De Circuits Integres Speciaux E.F.C.I.S. | Process for manufacturing isolated semiconductor components in a semiconductor wafer |
| US5457338A (en) * | 1983-06-21 | 1995-10-10 | Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux E.F.C.I.S. | Process for manufacturing isolated semi conductor components in a semi conductor wafer |
| JPS6038830A (ja) * | 1983-08-12 | 1985-02-28 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US5300448A (en) * | 1991-02-01 | 1994-04-05 | North American Philips Corporation | High voltage thin film transistor having a linear doping profile and method for making |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0420266B2 (enrdf_load_stackoverflow) | 1992-04-02 |
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