JPS5828865A - Ｍｏｓ集積回路用の安定化された基板電圧を発生するための基板バイアス発生器 - Google Patents

Ｍｏｓ集積回路用の安定化された基板電圧を発生するための基板バイアス発生器

Info

Publication number
JPS5828865A
JPS5828865A JP57082322A JP8232282A JPS5828865A JP S5828865 A JPS5828865 A JP S5828865A JP 57082322 A JP57082322 A JP 57082322A JP 8232282 A JP8232282 A JP 8232282A JP S5828865 A JPS5828865 A JP S5828865A
Authority
JP
Japan
Prior art keywords
signal
circuit point
circuit
substrate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57082322A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0344399B2 (enExample
Inventor
ウイリアム・カ−ル・スレマ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inmos Corp
Original Assignee
Inmos Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inmos Corp filed Critical Inmos Corp
Publication of JPS5828865A publication Critical patent/JPS5828865A/ja
Publication of JPH0344399B2 publication Critical patent/JPH0344399B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57082322A 1981-05-15 1982-05-15 Ｍｏｓ集積回路用の安定化された基板電圧を発生するための基板バイアス発生器 Granted JPS5828865A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/264,375 US4403158A (en) 1981-05-15 1981-05-15 Two-way regulated substrate bias generator
US264375 1981-05-15

Publications (2)

Publication Number Publication Date
JPS5828865A true JPS5828865A (ja) 1983-02-19
JPH0344399B2 JPH0344399B2 (enExample) 1991-07-05

Family

ID=23005781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57082322A Granted JPS5828865A (ja) 1981-05-15 1982-05-15 Ｍｏｓ集積回路用の安定化された基板電圧を発生するための基板バイアス発生器

Country Status (4)

Country Link
US (1) US4403158A (enExample)
EP (1) EP0066974B1 (enExample)
JP (1) JPS5828865A (enExample)
DE (1) DE3279235D1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172592A (ja) * 1986-01-23 1987-07-29 Mitsubishi Electric Corp 基板電圧発生回路装置
JPS62196861A (ja) * 1986-02-24 1987-08-31 Mitsubishi Electric Corp 内部電位発生回路
JPH01164264A (ja) * 1987-11-17 1989-06-28 Philips Gloeilampenfab:Nv 電圧増倍器集積回路と整流器素子

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455493A (en) * 1982-06-30 1984-06-19 Motorola, Inc. Substrate bias pump
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4670669A (en) * 1984-08-13 1987-06-02 International Business Machines Corporation Charge pumping structure for a substrate bias generator
US4701637A (en) * 1985-03-19 1987-10-20 International Business Machines Corporation Substrate bias generators
US4628214A (en) * 1985-05-22 1986-12-09 Sgs Semiconductor Corporation Back bias generator
US4847519A (en) * 1987-10-14 1989-07-11 Vtc Incorporated Integrated, high speed, zero hold current and delay compensated charge pump
GB9007791D0 (en) 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
GB9007790D0 (en) 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
JP2724919B2 (ja) * 1991-02-05 1998-03-09 三菱電機株式会社 基板バイアス発生装置
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
US5313111A (en) * 1992-02-28 1994-05-17 Texas Instruments Incorporated Substrate slew circuit providing reduced electron injection
KR950002726B1 (ko) * 1992-03-30 1995-03-24 삼성전자주식회사 기판전압 발생기의 전하 펌프 회로
KR0176115B1 (ko) * 1996-05-15 1999-04-15 김광호 불휘발성 반도체 메모리 장치의 차지 펌프 회로
KR100235958B1 (ko) * 1996-08-21 1999-12-15 김영환 반도체 메모리 장치의 복수 레벨 전압 발생기
FR2800214B1 (fr) * 1999-10-22 2001-12-28 St Microelectronics Sa Circuit elevateur de tension de type pompe de charge

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6700438A (enExample) * 1966-02-21 1967-08-22
DE2324914A1 (de) * 1973-05-17 1974-12-05 Itt Ind Gmbh Deutsche Integrierte igfet-eimerkettenschaltung
US3991322A (en) * 1975-06-30 1976-11-09 California Microwave, Inc. Signal delay means using bucket brigade and sample and hold circuits
US4079456A (en) * 1977-01-24 1978-03-14 Rca Corporation Output buffer synchronizing circuit having selectively variable delay means
CH614837B (fr) * 1977-07-08 Ebauches Sa Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS5632758A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Substrate bias generating circuit
US4306300A (en) * 1979-12-31 1981-12-15 International Business Machines Corporation Multi-level charge-coupled device memory system including analog-to-digital and trigger comparator circuits
US4336466A (en) * 1980-06-30 1982-06-22 Inmos Corporation Substrate bias generator
US4307333A (en) * 1980-07-29 1981-12-22 Sperry Corporation Two way regulating circuit
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172592A (ja) * 1986-01-23 1987-07-29 Mitsubishi Electric Corp 基板電圧発生回路装置
JPS62196861A (ja) * 1986-02-24 1987-08-31 Mitsubishi Electric Corp 内部電位発生回路
JPH01164264A (ja) * 1987-11-17 1989-06-28 Philips Gloeilampenfab:Nv 電圧増倍器集積回路と整流器素子

Also Published As

Publication number Publication date
JPH0344399B2 (enExample) 1991-07-05
DE3279235D1 (en) 1988-12-29
EP0066974A2 (en) 1982-12-15
US4403158A (en) 1983-09-06
EP0066974A3 (en) 1983-06-15
EP0066974B1 (en) 1988-11-23

Similar Documents

Publication Publication Date Title
JPS5828865A (ja) Ｍｏｓ集積回路用の安定化された基板電圧を発生するための基板バイアス発生器
KR100300243B1 (ko) 승압회로및이것을이용한반도체장치
JP3194138B2 (ja) ブートストラップチャージポンプ回路
JPH01259751A (ja) 昇圧回路
JPH08162915A (ja) 半導体集積回路
JPH10255469A (ja) 半導体集積回路
JPH0614529A (ja) 昇圧電位発生回路
US20050078541A1 (en) Voltage generating/transferring circuit
US5677643A (en) Potential detecting circuit which suppresses the adverse effects and eliminates dependency of detected potential on power supply potential
KR0130040B1 (ko) 반도체 집적회로의 전압 승압회로
JPS61126686A (ja) 半導体メモリのためのワ−ド線クロツク・ブ−スト回路
JP3431774B2 (ja) 混合電圧システムのための出力ドライバ
JP3638641B2 (ja) 昇圧電位発生回路
JPH0728207B2 (ja) Ｃｍｏｓ駆動回路
US6198341B1 (en) Substrate bias voltage generating circuit for use in a semiconductor device
JPH11501181A (ja) クロック式高電圧スイッチ
US5986935A (en) Semiconductor memory device with high voltage generation circuit
JPS6221323A (ja) 半導体記憶装置
JPH09294367A (ja) 電圧供給回路
JPH1131959A (ja) 半導体装置
JPH11134892A (ja) 内部電位発生回路
JPH08205526A (ja) 半導体集積回路の内部電圧昇圧回路
US5917366A (en) Voltage booster circuit and a voltage drop circuit with changeable operating levels
CN104793036B (zh) 双向电压微分器电路
JP3903532B2 (ja) 半導体記憶装置