DE3279235D1 - Improved substrate bias generator - Google Patents

Improved substrate bias generator

Info

Publication number
DE3279235D1
DE3279235D1 DE8282302480T DE3279235T DE3279235D1 DE 3279235 D1 DE3279235 D1 DE 3279235D1 DE 8282302480 T DE8282302480 T DE 8282302480T DE 3279235 T DE3279235 T DE 3279235T DE 3279235 D1 DE3279235 D1 DE 3279235D1
Authority
DE
Germany
Prior art keywords
substrate bias
bias generator
improved substrate
improved
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282302480T
Other languages
German (de)
English (en)
Inventor
William Carl Slemmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inmos Corp
Original Assignee
Inmos Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inmos Corp filed Critical Inmos Corp
Application granted granted Critical
Publication of DE3279235D1 publication Critical patent/DE3279235D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
DE8282302480T 1981-05-15 1982-05-14 Improved substrate bias generator Expired DE3279235D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/264,375 US4403158A (en) 1981-05-15 1981-05-15 Two-way regulated substrate bias generator

Publications (1)

Publication Number Publication Date
DE3279235D1 true DE3279235D1 (en) 1988-12-29

Family

ID=23005781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282302480T Expired DE3279235D1 (en) 1981-05-15 1982-05-14 Improved substrate bias generator

Country Status (4)

Country Link
US (1) US4403158A (enExample)
EP (1) EP0066974B1 (enExample)
JP (1) JPS5828865A (enExample)
DE (1) DE3279235D1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455493A (en) * 1982-06-30 1984-06-19 Motorola, Inc. Substrate bias pump
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4670669A (en) * 1984-08-13 1987-06-02 International Business Machines Corporation Charge pumping structure for a substrate bias generator
US4701637A (en) * 1985-03-19 1987-10-20 International Business Machines Corporation Substrate bias generators
US4628214A (en) * 1985-05-22 1986-12-09 Sgs Semiconductor Corporation Back bias generator
JPS62172592A (ja) * 1986-01-23 1987-07-29 Mitsubishi Electric Corp 基板電圧発生回路装置
JPS62196861A (ja) * 1986-02-24 1987-08-31 Mitsubishi Electric Corp 内部電位発生回路
US4847519A (en) * 1987-10-14 1989-07-11 Vtc Incorporated Integrated, high speed, zero hold current and delay compensated charge pump
NL8702734A (nl) * 1987-11-17 1989-06-16 Philips Nv Spanningsvermenigvuldigschakeling en gelijkrichtelement.
GB9007791D0 (en) 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
GB9007790D0 (en) 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
JP2724919B2 (ja) * 1991-02-05 1998-03-09 三菱電機株式会社 基板バイアス発生装置
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
US5313111A (en) * 1992-02-28 1994-05-17 Texas Instruments Incorporated Substrate slew circuit providing reduced electron injection
KR950002726B1 (ko) * 1992-03-30 1995-03-24 삼성전자주식회사 기판전압 발생기의 전하 펌프 회로
KR0176115B1 (ko) * 1996-05-15 1999-04-15 김광호 불휘발성 반도체 메모리 장치의 차지 펌프 회로
KR100235958B1 (ko) * 1996-08-21 1999-12-15 김영환 반도체 메모리 장치의 복수 레벨 전압 발생기
FR2800214B1 (fr) * 1999-10-22 2001-12-28 St Microelectronics Sa Circuit elevateur de tension de type pompe de charge

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6700438A (enExample) * 1966-02-21 1967-08-22
DE2324914A1 (de) * 1973-05-17 1974-12-05 Itt Ind Gmbh Deutsche Integrierte igfet-eimerkettenschaltung
US3991322A (en) * 1975-06-30 1976-11-09 California Microwave, Inc. Signal delay means using bucket brigade and sample and hold circuits
US4079456A (en) * 1977-01-24 1978-03-14 Rca Corporation Output buffer synchronizing circuit having selectively variable delay means
CH614837B (fr) * 1977-07-08 Ebauches Sa Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS5632758A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Substrate bias generating circuit
US4306300A (en) * 1979-12-31 1981-12-15 International Business Machines Corporation Multi-level charge-coupled device memory system including analog-to-digital and trigger comparator circuits
US4336466A (en) * 1980-06-30 1982-06-22 Inmos Corporation Substrate bias generator
US4307333A (en) * 1980-07-29 1981-12-22 Sperry Corporation Two way regulating circuit
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory

Also Published As

Publication number Publication date
JPS5828865A (ja) 1983-02-19
JPH0344399B2 (enExample) 1991-07-05
EP0066974A2 (en) 1982-12-15
US4403158A (en) 1983-09-06
EP0066974A3 (en) 1983-06-15
EP0066974B1 (en) 1988-11-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition