JPS58216437A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58216437A
JPS58216437A JP57101101A JP10110182A JPS58216437A JP S58216437 A JPS58216437 A JP S58216437A JP 57101101 A JP57101101 A JP 57101101A JP 10110182 A JP10110182 A JP 10110182A JP S58216437 A JPS58216437 A JP S58216437A
Authority
JP
Japan
Prior art keywords
silicon substrate
nitride film
groove
impurity
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57101101A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6312380B2 (enExample
Inventor
Makoto Hirayama
誠 平山
Natsuo Tsubouchi
坪内　夏朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57101101A priority Critical patent/JPS58216437A/ja
Publication of JPS58216437A publication Critical patent/JPS58216437A/ja
Publication of JPS6312380B2 publication Critical patent/JPS6312380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP57101101A 1982-06-10 1982-06-10 半導体装置の製造方法 Granted JPS58216437A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57101101A JPS58216437A (ja) 1982-06-10 1982-06-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57101101A JPS58216437A (ja) 1982-06-10 1982-06-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58216437A true JPS58216437A (ja) 1983-12-16
JPS6312380B2 JPS6312380B2 (enExample) 1988-03-18

Family

ID=14291692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57101101A Granted JPS58216437A (ja) 1982-06-10 1982-06-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58216437A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006147951A (ja) * 2004-11-22 2006-06-08 Matsushita Electric Ind Co Ltd ショットキーバリアダイオード及びそれを用いた集積回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429573A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Fine machining method of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429573A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Fine machining method of semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006147951A (ja) * 2004-11-22 2006-06-08 Matsushita Electric Ind Co Ltd ショットキーバリアダイオード及びそれを用いた集積回路

Also Published As

Publication number Publication date
JPS6312380B2 (enExample) 1988-03-18

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