JPS58212180A - 不揮発性記憶装置およびその製造方法 - Google Patents

不揮発性記憶装置およびその製造方法

Info

Publication number
JPS58212180A
JPS58212180A JP57095191A JP9519182A JPS58212180A JP S58212180 A JPS58212180 A JP S58212180A JP 57095191 A JP57095191 A JP 57095191A JP 9519182 A JP9519182 A JP 9519182A JP S58212180 A JPS58212180 A JP S58212180A
Authority
JP
Japan
Prior art keywords
silicon nitride
film
memory device
nitride film
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57095191A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0334672B2 (enrdf_load_stackoverflow
Inventor
Kazuo Sato
和夫 佐藤
Ichizo Kamei
亀井　市蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP57095191A priority Critical patent/JPS58212180A/ja
Publication of JPS58212180A publication Critical patent/JPS58212180A/ja
Publication of JPH0334672B2 publication Critical patent/JPH0334672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
JP57095191A 1982-06-03 1982-06-03 不揮発性記憶装置およびその製造方法 Granted JPS58212180A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57095191A JPS58212180A (ja) 1982-06-03 1982-06-03 不揮発性記憶装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57095191A JPS58212180A (ja) 1982-06-03 1982-06-03 不揮発性記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS58212180A true JPS58212180A (ja) 1983-12-09
JPH0334672B2 JPH0334672B2 (enrdf_load_stackoverflow) 1991-05-23

Family

ID=14130857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57095191A Granted JPS58212180A (ja) 1982-06-03 1982-06-03 不揮発性記憶装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS58212180A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181474A (ja) * 1986-02-05 1987-08-08 Matsushita Electronics Corp 半導体記憶装置
US5168334A (en) * 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893289A (ja) * 1981-11-30 1983-06-02 Seiko Epson Corp 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893289A (ja) * 1981-11-30 1983-06-02 Seiko Epson Corp 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181474A (ja) * 1986-02-05 1987-08-08 Matsushita Electronics Corp 半導体記憶装置
US5168334A (en) * 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory

Also Published As

Publication number Publication date
JPH0334672B2 (enrdf_load_stackoverflow) 1991-05-23

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