JPH0422031B2 - - Google Patents

Info

Publication number
JPH0422031B2
JPH0422031B2 JP58165558A JP16555883A JPH0422031B2 JP H0422031 B2 JPH0422031 B2 JP H0422031B2 JP 58165558 A JP58165558 A JP 58165558A JP 16555883 A JP16555883 A JP 16555883A JP H0422031 B2 JPH0422031 B2 JP H0422031B2
Authority
JP
Japan
Prior art keywords
silicon nitride
oxide film
silicon oxide
nitride film
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58165558A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6057674A (ja
Inventor
Kanji Hirano
Kazuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58165558A priority Critical patent/JPS6057674A/ja
Publication of JPS6057674A publication Critical patent/JPS6057674A/ja
Publication of JPH0422031B2 publication Critical patent/JPH0422031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
JP58165558A 1983-09-08 1983-09-08 半導体記憶装置の製造方法 Granted JPS6057674A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165558A JPS6057674A (ja) 1983-09-08 1983-09-08 半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165558A JPS6057674A (ja) 1983-09-08 1983-09-08 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6057674A JPS6057674A (ja) 1985-04-03
JPH0422031B2 true JPH0422031B2 (enrdf_load_stackoverflow) 1992-04-15

Family

ID=15814639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165558A Granted JPS6057674A (ja) 1983-09-08 1983-09-08 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6057674A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665232B2 (ja) * 1984-07-30 1994-08-22 松下電子工業株式会社 半導体記憶装置の製造方法
JPH0319286A (ja) * 1989-06-15 1991-01-28 Matsushita Electron Corp 不揮発性半導体記憶装置の製造方法
KR100490293B1 (ko) * 2000-12-08 2005-05-17 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
KR100691960B1 (ko) 2004-12-30 2007-03-09 동부일렉트로닉스 주식회사 소노스 소자 제조 방법

Also Published As

Publication number Publication date
JPS6057674A (ja) 1985-04-03

Similar Documents

Publication Publication Date Title
JP4151229B2 (ja) 不揮発性半導体記憶装置およびその製造方法
CN101517714B (zh) Sonos ono堆栈等比缩小
US6319775B1 (en) Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device
JP2551595B2 (ja) 半導体不揮発性メモリ素子
JPH08255878A (ja) フローティングゲートトランジスタ及びその製造方法
US20090032861A1 (en) Nonvolatile memories with charge trapping layers containing silicon nitride with germanium or phosphorus
JP2004221448A (ja) 不揮発性半導体記憶装置およびその製造方法
JP2002261175A (ja) 不揮発性半導体記憶装置およびその製造方法
US4305086A (en) MNOS Memory device and method of manufacture
JP3288796B2 (ja) 半導体装置
JPH0964205A (ja) 窒化シリコン膜の形成方法
JPS6320387B2 (enrdf_load_stackoverflow)
JPH0422031B2 (enrdf_load_stackoverflow)
JPH0665232B2 (ja) 半導体記憶装置の製造方法
JPH061839B2 (ja) 不揮発性記憶装置の製造方法
JPH0259632B2 (enrdf_load_stackoverflow)
JP4734799B2 (ja) 不揮発性半導体メモリ装置の製造方法
JPH0259631B2 (enrdf_load_stackoverflow)
JP3272007B2 (ja) 電荷トラップ膜の製造方法
JPH02277269A (ja) 不揮発性メモリ装置の製造方法
JPS6170763A (ja) 半導体記憶装置の製造方法
JPH0888286A (ja) 半導体記憶装置の製造方法
JPS59188977A (ja) 半導体不揮発性記憶装置の製造方法
JPH0334672B2 (enrdf_load_stackoverflow)
JPS61288471A (ja) 半導体記憶装置の製造方法