JPS6057674A - 半導体記憶装置の製造方法 - Google Patents

半導体記憶装置の製造方法

Info

Publication number
JPS6057674A
JPS6057674A JP58165558A JP16555883A JPS6057674A JP S6057674 A JPS6057674 A JP S6057674A JP 58165558 A JP58165558 A JP 58165558A JP 16555883 A JP16555883 A JP 16555883A JP S6057674 A JPS6057674 A JP S6057674A
Authority
JP
Japan
Prior art keywords
semiconductor memory
silicon oxide
memory device
oxide film
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58165558A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0422031B2 (enrdf_load_stackoverflow
Inventor
Kanji Hirano
平野　幹二
Kazuo Sato
和夫 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP58165558A priority Critical patent/JPS6057674A/ja
Publication of JPS6057674A publication Critical patent/JPS6057674A/ja
Publication of JPH0422031B2 publication Critical patent/JPH0422031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
JP58165558A 1983-09-08 1983-09-08 半導体記憶装置の製造方法 Granted JPS6057674A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165558A JPS6057674A (ja) 1983-09-08 1983-09-08 半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165558A JPS6057674A (ja) 1983-09-08 1983-09-08 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6057674A true JPS6057674A (ja) 1985-04-03
JPH0422031B2 JPH0422031B2 (enrdf_load_stackoverflow) 1992-04-15

Family

ID=15814639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165558A Granted JPS6057674A (ja) 1983-09-08 1983-09-08 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6057674A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136976A (ja) * 1984-07-30 1986-02-21 Matsushita Electronics Corp 半導体記憶装置の製造方法
JPH0319286A (ja) * 1989-06-15 1991-01-28 Matsushita Electron Corp 不揮発性半導体記憶装置の製造方法
KR100490293B1 (ko) * 2000-12-08 2005-05-17 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
KR100691960B1 (ko) 2004-12-30 2007-03-09 동부일렉트로닉스 주식회사 소노스 소자 제조 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136976A (ja) * 1984-07-30 1986-02-21 Matsushita Electronics Corp 半導体記憶装置の製造方法
JPH0319286A (ja) * 1989-06-15 1991-01-28 Matsushita Electron Corp 不揮発性半導体記憶装置の製造方法
KR100490293B1 (ko) * 2000-12-08 2005-05-17 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
KR100691960B1 (ko) 2004-12-30 2007-03-09 동부일렉트로닉스 주식회사 소노스 소자 제조 방법

Also Published As

Publication number Publication date
JPH0422031B2 (enrdf_load_stackoverflow) 1992-04-15

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