JPS6357945B2 - - Google Patents

Info

Publication number
JPS6357945B2
JPS6357945B2 JP58163470A JP16347083A JPS6357945B2 JP S6357945 B2 JPS6357945 B2 JP S6357945B2 JP 58163470 A JP58163470 A JP 58163470A JP 16347083 A JP16347083 A JP 16347083A JP S6357945 B2 JPS6357945 B2 JP S6357945B2
Authority
JP
Japan
Prior art keywords
silicon
nitride film
film
region
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58163470A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6055669A (ja
Inventor
Yutaka Hayashi
Hidekazu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58163470A priority Critical patent/JPS6055669A/ja
Publication of JPS6055669A publication Critical patent/JPS6055669A/ja
Publication of JPS6357945B2 publication Critical patent/JPS6357945B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
JP58163470A 1983-09-06 1983-09-06 不揮発性半導体メモリ素子 Granted JPS6055669A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58163470A JPS6055669A (ja) 1983-09-06 1983-09-06 不揮発性半導体メモリ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163470A JPS6055669A (ja) 1983-09-06 1983-09-06 不揮発性半導体メモリ素子

Publications (2)

Publication Number Publication Date
JPS6055669A JPS6055669A (ja) 1985-03-30
JPS6357945B2 true JPS6357945B2 (enrdf_load_stackoverflow) 1988-11-14

Family

ID=15774480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163470A Granted JPS6055669A (ja) 1983-09-06 1983-09-06 不揮発性半導体メモリ素子

Country Status (1)

Country Link
JP (1) JPS6055669A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2527859B2 (ja) * 1991-08-12 1996-08-28 市三郎 斉藤 多層床面よりなる駐車場における昇降用路面
JPH07113281B2 (ja) * 1992-06-04 1995-12-06 大井建興株式会社 連続傾床型自走式立体駐車場
JP2000200842A (ja) * 1998-11-04 2000-07-18 Sony Corp 不揮発性半導体記憶装置、製造方法および書き込み方法
JP4923318B2 (ja) * 1999-12-17 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
JP4696383B2 (ja) * 2001-03-28 2011-06-08 ソニー株式会社 不揮発性半導体記憶装置の製造方法

Also Published As

Publication number Publication date
JPS6055669A (ja) 1985-03-30

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