JPS6320387B2 - - Google Patents

Info

Publication number
JPS6320387B2
JPS6320387B2 JP56134751A JP13475181A JPS6320387B2 JP S6320387 B2 JPS6320387 B2 JP S6320387B2 JP 56134751 A JP56134751 A JP 56134751A JP 13475181 A JP13475181 A JP 13475181A JP S6320387 B2 JPS6320387 B2 JP S6320387B2
Authority
JP
Japan
Prior art keywords
film
layer
composition
nitride film
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56134751A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5834978A (ja
Inventor
Kazuo Sato
Motoki Hidaka
Ichizo Kamei
Harumi Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP56134751A priority Critical patent/JPS5834978A/ja
Publication of JPS5834978A publication Critical patent/JPS5834978A/ja
Publication of JPS6320387B2 publication Critical patent/JPS6320387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
JP56134751A 1981-08-26 1981-08-26 半導体記憶装置 Granted JPS5834978A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56134751A JPS5834978A (ja) 1981-08-26 1981-08-26 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56134751A JPS5834978A (ja) 1981-08-26 1981-08-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5834978A JPS5834978A (ja) 1983-03-01
JPS6320387B2 true JPS6320387B2 (enrdf_load_stackoverflow) 1988-04-27

Family

ID=15135714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56134751A Granted JPS5834978A (ja) 1981-08-26 1981-08-26 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS5834978A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2747556B2 (ja) * 1986-03-31 1998-05-06 株式会社 半導体エネルギー研究所 絶縁ゲート型電界効果半導体メモリ装置の作製方法
JPH0642550B2 (ja) * 1987-08-10 1994-06-01 山形日本電気株式会社 Ｍｉｓ型不揮発性メモリ−及びその製造方法
JPH0779138B2 (ja) * 1987-08-31 1995-08-23 工業技術院長 不揮発性半導体メモリ素子
JP2512589Y2 (ja) * 1992-11-09 1996-10-02 工業技術院長 半導体不揮発性記憶装置
JP4492930B2 (ja) * 2004-02-10 2010-06-30 日本電信電話株式会社 電荷蓄積型メモリ及びその製造方法
KR100594266B1 (ko) * 2004-03-17 2006-06-30 삼성전자주식회사 소노스 타입 메모리 소자
JP2006319082A (ja) * 2005-05-12 2006-11-24 Sony Corp 不揮発性半導体メモリデバイス
JP4853893B2 (ja) * 2005-05-17 2012-01-11 日本電信電話株式会社 電荷蓄積型メモリ
JP2007194511A (ja) * 2006-01-23 2007-08-02 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
JP5155070B2 (ja) 2008-09-02 2013-02-27 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913118A (enrdf_load_stackoverflow) * 1972-06-06 1974-02-05

Also Published As

Publication number Publication date
JPS5834978A (ja) 1983-03-01

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