JPH0259631B2 - - Google Patents

Info

Publication number
JPH0259631B2
JPH0259631B2 JP58168897A JP16889783A JPH0259631B2 JP H0259631 B2 JPH0259631 B2 JP H0259631B2 JP 58168897 A JP58168897 A JP 58168897A JP 16889783 A JP16889783 A JP 16889783A JP H0259631 B2 JPH0259631 B2 JP H0259631B2
Authority
JP
Japan
Prior art keywords
silicon nitride
nitride film
oxide film
silicon oxide
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58168897A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6059779A (ja
Inventor
Kazuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58168897A priority Critical patent/JPS6059779A/ja
Publication of JPS6059779A publication Critical patent/JPS6059779A/ja
Publication of JPH0259631B2 publication Critical patent/JPH0259631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
JP58168897A 1983-09-13 1983-09-13 半導体記憶装置の製造方法 Granted JPS6059779A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58168897A JPS6059779A (ja) 1983-09-13 1983-09-13 半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58168897A JPS6059779A (ja) 1983-09-13 1983-09-13 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6059779A JPS6059779A (ja) 1985-04-06
JPH0259631B2 true JPH0259631B2 (enrdf_load_stackoverflow) 1990-12-13

Family

ID=15876589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58168897A Granted JPS6059779A (ja) 1983-09-13 1983-09-13 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6059779A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4590744B2 (ja) * 2001-01-25 2010-12-01 ソニー株式会社 不揮発性半導体記憶素子及びその製造方法
JP2002222876A (ja) * 2001-01-25 2002-08-09 Sony Corp 不揮発性半導体記憶素子及びその製造方法
JP4734799B2 (ja) * 2001-08-24 2011-07-27 ソニー株式会社 不揮発性半導体メモリ装置の製造方法
WO2008072692A1 (ja) 2006-12-15 2008-06-19 Nec Corporation 不揮発性記憶装置及びその製造方法

Also Published As

Publication number Publication date
JPS6059779A (ja) 1985-04-06

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