JPH0259632B2 - - Google Patents

Info

Publication number
JPH0259632B2
JPH0259632B2 JP58169659A JP16965983A JPH0259632B2 JP H0259632 B2 JPH0259632 B2 JP H0259632B2 JP 58169659 A JP58169659 A JP 58169659A JP 16965983 A JP16965983 A JP 16965983A JP H0259632 B2 JPH0259632 B2 JP H0259632B2
Authority
JP
Japan
Prior art keywords
silicon nitride
nitride film
film
silicon oxide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58169659A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6060770A (ja
Inventor
Kazuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58169659A priority Critical patent/JPS6060770A/ja
Publication of JPS6060770A publication Critical patent/JPS6060770A/ja
Publication of JPH0259632B2 publication Critical patent/JPH0259632B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
JP58169659A 1983-09-14 1983-09-14 半導体記憶装置 Granted JPS6060770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58169659A JPS6060770A (ja) 1983-09-14 1983-09-14 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58169659A JPS6060770A (ja) 1983-09-14 1983-09-14 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6060770A JPS6060770A (ja) 1985-04-08
JPH0259632B2 true JPH0259632B2 (enrdf_load_stackoverflow) 1990-12-13

Family

ID=15890551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58169659A Granted JPS6060770A (ja) 1983-09-14 1983-09-14 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6060770A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214474A (ja) * 1985-07-12 1987-01-23 Agency Of Ind Science & Technol 半導体不揮発性記憶装置
JP2512589Y2 (ja) * 1992-11-09 1996-10-02 工業技術院長 半導体不揮発性記憶装置
JP4151229B2 (ja) * 2000-10-26 2008-09-17 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
JP4734799B2 (ja) * 2001-08-24 2011-07-27 ソニー株式会社 不揮発性半導体メモリ装置の製造方法
JP3637332B2 (ja) 2002-05-29 2005-04-13 株式会社東芝 半導体装置及びその製造方法
KR101402102B1 (ko) 2007-03-23 2014-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작 방법

Also Published As

Publication number Publication date
JPS6060770A (ja) 1985-04-08

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