JPH0259632B2 - - Google Patents
Info
- Publication number
- JPH0259632B2 JPH0259632B2 JP58169659A JP16965983A JPH0259632B2 JP H0259632 B2 JPH0259632 B2 JP H0259632B2 JP 58169659 A JP58169659 A JP 58169659A JP 16965983 A JP16965983 A JP 16965983A JP H0259632 B2 JPH0259632 B2 JP H0259632B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- film
- silicon oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58169659A JPS6060770A (ja) | 1983-09-14 | 1983-09-14 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58169659A JPS6060770A (ja) | 1983-09-14 | 1983-09-14 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6060770A JPS6060770A (ja) | 1985-04-08 |
JPH0259632B2 true JPH0259632B2 (enrdf_load_stackoverflow) | 1990-12-13 |
Family
ID=15890551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58169659A Granted JPS6060770A (ja) | 1983-09-14 | 1983-09-14 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6060770A (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6214474A (ja) * | 1985-07-12 | 1987-01-23 | Agency Of Ind Science & Technol | 半導体不揮発性記憶装置 |
JP2512589Y2 (ja) * | 1992-11-09 | 1996-10-02 | 工業技術院長 | 半導体不揮発性記憶装置 |
JP4151229B2 (ja) * | 2000-10-26 | 2008-09-17 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
JP4734799B2 (ja) * | 2001-08-24 | 2011-07-27 | ソニー株式会社 | 不揮発性半導体メモリ装置の製造方法 |
JP3637332B2 (ja) | 2002-05-29 | 2005-04-13 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN102522430B (zh) | 2007-03-23 | 2014-10-22 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
-
1983
- 1983-09-14 JP JP58169659A patent/JPS6060770A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6060770A (ja) | 1985-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11784243B2 (en) | Oxide-nitride-oxide stack having multiple oxynitride layers | |
JP4489359B2 (ja) | 不揮発性半導体記憶装置 | |
JP2643833B2 (ja) | 半導体記憶装置及びその製造方法 | |
US8841184B2 (en) | Dielectric layer for semiconductor device and method of manufacturing the same | |
JP4151229B2 (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
US6642573B1 (en) | Use of high-K dielectric material in modified ONO structure for semiconductor devices | |
US6844604B2 (en) | Dielectric layer for semiconductor device and method of manufacturing the same | |
US8294200B2 (en) | Non-volatile memory device | |
JP2009267366A (ja) | 半導体記憶装置及びその製造方法 | |
JP2009060102A (ja) | アルミニウム酸化物層の形成方法及びそれを利用した電荷トラップ型メモリ素子の製造方法 | |
JPH0259632B2 (enrdf_load_stackoverflow) | ||
JPS6320387B2 (enrdf_load_stackoverflow) | ||
US7163860B1 (en) | Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device | |
JPH0259631B2 (enrdf_load_stackoverflow) | ||
JPH0422031B2 (enrdf_load_stackoverflow) | ||
JPH0665232B2 (ja) | 半導体記憶装置の製造方法 | |
JPH061839B2 (ja) | 不揮発性記憶装置の製造方法 | |
JPH0334672B2 (enrdf_load_stackoverflow) | ||
JPS6357945B2 (enrdf_load_stackoverflow) | ||
JPS61288471A (ja) | 半導体記憶装置の製造方法 | |
JPS6170763A (ja) | 半導体記憶装置の製造方法 | |
JPH02114568A (ja) | 不揮発性記憶装置の製造方法 | |
CN116390491A (zh) | 基于氧化物二维电子气的非易失性存储器及其制备方法 | |
CN102714223A (zh) | 具有多重氮氧化物层的氧化物-氮化物-氧化物堆叠 | |
JPS5898976A (ja) | 不揮発性記憶装置の製造方法 |