JPS6060770A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6060770A
JPS6060770A JP58169659A JP16965983A JPS6060770A JP S6060770 A JPS6060770 A JP S6060770A JP 58169659 A JP58169659 A JP 58169659A JP 16965983 A JP16965983 A JP 16965983A JP S6060770 A JPS6060770 A JP S6060770A
Authority
JP
Japan
Prior art keywords
silicon nitride
film
silicon oxide
nitride film
bonds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58169659A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0259632B2 (enrdf_load_stackoverflow
Inventor
Kazuo Sato
和夫 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP58169659A priority Critical patent/JPS6060770A/ja
Publication of JPS6060770A publication Critical patent/JPS6060770A/ja
Publication of JPH0259632B2 publication Critical patent/JPH0259632B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
JP58169659A 1983-09-14 1983-09-14 半導体記憶装置 Granted JPS6060770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58169659A JPS6060770A (ja) 1983-09-14 1983-09-14 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58169659A JPS6060770A (ja) 1983-09-14 1983-09-14 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6060770A true JPS6060770A (ja) 1985-04-08
JPH0259632B2 JPH0259632B2 (enrdf_load_stackoverflow) 1990-12-13

Family

ID=15890551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58169659A Granted JPS6060770A (ja) 1983-09-14 1983-09-14 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6060770A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214474A (ja) * 1985-07-12 1987-01-23 Agency Of Ind Science & Technol 半導体不揮発性記憶装置
JPH069155U (ja) * 1992-11-09 1994-02-04 工業技術院長 半導体不揮発性記憶装置
WO2002035610A1 (en) * 2000-10-26 2002-05-02 Sony Corporation Nonvolatile semiconductor storage and method for manufacturing the same
JP2003068892A (ja) * 2001-08-24 2003-03-07 Sony Corp 不揮発性半導体メモリ装置の製造方法
US7372113B2 (en) 2002-05-29 2008-05-13 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US7851296B2 (en) 2007-03-23 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214474A (ja) * 1985-07-12 1987-01-23 Agency Of Ind Science & Technol 半導体不揮発性記憶装置
JPH069155U (ja) * 1992-11-09 1994-02-04 工業技術院長 半導体不揮発性記憶装置
WO2002035610A1 (en) * 2000-10-26 2002-05-02 Sony Corporation Nonvolatile semiconductor storage and method for manufacturing the same
US6906390B2 (en) 2000-10-26 2005-06-14 Sony Corporation Nonvolatile semiconductor storage and method for manufacturing the same
US7259433B2 (en) * 2000-10-26 2007-08-21 Sony Corporation Non-volatile semiconductor memory device and method for producing same
JP2003068892A (ja) * 2001-08-24 2003-03-07 Sony Corp 不揮発性半導体メモリ装置の製造方法
US7372113B2 (en) 2002-05-29 2008-05-13 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US7851296B2 (en) 2007-03-23 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US8350313B2 (en) 2007-03-23 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory transistor

Also Published As

Publication number Publication date
JPH0259632B2 (enrdf_load_stackoverflow) 1990-12-13

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