JP4261408B2 - 半導体デバイスおよび半導体デバイスの製造方法 - Google Patents
半導体デバイスおよび半導体デバイスの製造方法 Download PDFInfo
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- JP4261408B2 JP4261408B2 JP2004108050A JP2004108050A JP4261408B2 JP 4261408 B2 JP4261408 B2 JP 4261408B2 JP 2004108050 A JP2004108050 A JP 2004108050A JP 2004108050 A JP2004108050 A JP 2004108050A JP 4261408 B2 JP4261408 B2 JP 4261408B2
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- silicide
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- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010408 film Substances 0.000 claims description 192
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 116
- 229910021332 silicide Inorganic materials 0.000 claims description 108
- 239000000758 substrate Substances 0.000 claims description 100
- 239000010409 thin film Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 229910052755 nonmetal Inorganic materials 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 27
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 239000002356 single layer Substances 0.000 claims description 16
- 229910052726 zirconium Inorganic materials 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052762 osmium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 description 53
- 230000015572 biosynthetic process Effects 0.000 description 51
- 239000010936 titanium Substances 0.000 description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 38
- 229910052760 oxygen Inorganic materials 0.000 description 38
- 239000001301 oxygen Substances 0.000 description 38
- 229910004298 SiO 2 Inorganic materials 0.000 description 36
- 230000007547 defect Effects 0.000 description 35
- 230000003647 oxidation Effects 0.000 description 33
- 238000007254 oxidation reaction Methods 0.000 description 33
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 229910008484 TiSi Inorganic materials 0.000 description 17
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 16
- 229910004122 SrSi Inorganic materials 0.000 description 16
- 238000000137 annealing Methods 0.000 description 13
- 238000002416 scanning tunnelling spectroscopy Methods 0.000 description 12
- 229910002367 SrTiO Inorganic materials 0.000 description 11
- 229910005883 NiSi Inorganic materials 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 229910004706 CaSi2 Inorganic materials 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013213 extrapolation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- 229910017121 AlSiO Inorganic materials 0.000 description 1
- 229910016066 BaSi Inorganic materials 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910018248 LaON Inorganic materials 0.000 description 1
- 229910004412 SrSi2 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- -1 YON Inorganic materials 0.000 description 1
- 229910006252 ZrON Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000146 jump and return pulse sequence Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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Description
ここで、非金属シリサイド薄膜の形態としては以下の二つが考えられる。
次に、本発明の第1の実施例として、Si基板上にアモルファスHfO2誘電体膜を設けたMOSFETについて説明する。
次に、電極14として、TiNをスパッタ―により成膜した。
このとき、Si基板と誘電体の間の界面欠陥密度Ditを測定すると、およそ9×108cm-2というSi基板上のSiO2薄膜界面の最適化した場合の値を凌駕する良好な値であった。このことは、シリサイド構造を作る過程・その上に高誘電体薄膜を作成する過程を絞り込んだ結果得られたものである。その結果、Si・SiO2界面での電子の移動度以上の高い移動度(550cm2V-1sec-1)が得られており、この界面作成過程が非常に有効であることが確認された。
(第2の実施例)
次に、本発明の第2実施例として、Si基板上にアモルファスSrHfO3誘電体膜を設けたMOSFETについて説明する。
すなわち、本実施例のFETは、シリコン基板21の表面部分に、ソース領域S、ドレイン領域Dが形成され、これらの間に形成されたチャネル領域の上に絶縁性シリサイド薄膜22、ゲート絶縁膜23を介してゲート電極24が設けられている。ここで、シリサイドは1ML(Mono Layer)の非金属薄膜SrSi2シリサイドであり、Si基板のダングリングボンドを終端している。
(第三の実施例)
次に、本発明による第3実施例として、Si基板上にアモルファスZrO2誘電体膜を設けたMOSFETについて説明する。
(第4の実施例)
次に、本発明の第4実施例として、Si基板上にエピタキシャルCa(Zr、Ti)O3誘電体膜を設けたMOSFETについて説明する。
すなわち、本実施例のFETは、シリコン基板41の表面部分に、ソース領域S、ドレイン領域Dが形成され、これらの間に形成されたチャネル領域の上に非金属シリサイド薄膜42、ゲート絶縁膜43を介してゲート電極44が設けられている。ここで、シリサイドは1ML(Mono Layer)の非金属シリサイド薄膜CaSi2シリサイドであり、Si基板のダングリングボンドを終端している。
(第5の実施例)
次に、本発明による第5実施例として、Si基板上にアモルファスSrTiO3誘電体膜を設けたMOSFETについて説明する。
すなわち、本実施例のFETは、シリコン基板51の表面部分に、ソース領域S、ドレイン領域Dが形成され、これらの間に形成されたチャネル領域の上に非金属シリサイド薄膜52、ゲート絶縁膜53を介してゲート電極54が設けられている。ここで、シリサイドは1ML(Mono Layer)の非金属薄膜SrSi2シリサイド上に再構成構造にして4倍の大きさになるようにシリサイド構造を再構成した高抵抗シリサイドであり、Si基板のダングリングボンドを終端している。
(第六の実施例)
次に、本発明による第6実施例として、Si基板上にアモルファスLaAlO3誘電体膜を設けたMOSFETについて説明する。
本発明は、CMOS等のロジック回路や、SRAM、DRAM、フラッシュ、MRAM、FeRAM等のメモリ(特に周辺回路)への適用、さらにはこれらを組み合わせて混載したシステムLSIへの応用も考えられる。
12・・・非金属TiSi2薄膜
13・・・HfO2膜
14・・・TiNゲート電極
22・・・非金属SrSi2薄膜
23・・・SrHfO3高誘電体膜
24、34、44、54、64・・・ゲート電極
32・・・非金属NiSiモノシリサイド薄膜
33・・・ZrO2高誘電体膜
42・・・非金属CaSi2薄膜
43・・・Ca(Ti、Zr)O3高誘電体膜
52・・・非金属SrSi2薄膜
53・・・SrTiO3高誘電体膜
62・・・非金属TiSi薄膜
63・・・LaAlO3高誘電体膜
Claims (4)
- Siを主成分とする半導体基板上に形成され、金属(M)対Siの比が1:2(MSi
2 )又は金属(M)対Siの比が1:1(MSi)であり、MがMg、Ca、Sr、Ba、
Co、Ni、Pd、Pt、Cu、Ag、Zn、から選ばれた2価の金属もしくはTi、Zr、Hf、Ce
、Mo、W、Ru、Os、Irから選ばれた4価の金属から形成された1モノレイヤーの厚さ
で、かつバンドギャップが十分開いた絶縁体である非金属シリサイド薄膜と、
前記非金属シリサイド膜上に形成された酸化物、窒化物、酸窒化物の何れかからなる高
誘電率膜と、
前記高誘電率膜上に形成されたゲート電極とを有し、
前記非金属シリサイド薄膜により前記半導体基板のSiのダングリングボンドが
終端されているMIS型電界効果トランジスタであることを特徴とする半導体デ
バイス。 - 前記非金属シリサイド薄膜上に接するように、前記非金属シリサイド薄膜と同じ金属(
M)からなる高抵抗シリサイド膜が再構成構造を持つように形成されていることを特徴と
する請求項1記載の半導体デバイス。 - 請求項1記載のMIS型電界効果トランジスタの製造方法であって、
バンドギャップが十分開いた絶縁体で、金属(M)対Siの比が1:2(MSi 2 )又
は金属(M)対Siの比が1:1(MSi)であり、MがMg、Ca、Sr、Ba、Co、Ni
、Pd、Pt、Cu、Ag、Zn、から選ばれた2価の金属もしくはTi、Zr、Hf、Ce、Mo、
W、Ru、Os、Irから選ばれた4価の金属から形成された非金属シリサイドをスパッタ
、CVD、ALD、又はMBEのいずれかの方法により、1モノレイヤーの厚さになるよ
うに形成する工程と、
前記非金属シリサイド膜上に酸化物、窒化物、酸窒化物の何れかからなる高誘電率膜を
形成する工程と、
前記高誘電率膜上にゲート電極を形成する工程と、を具備することを特徴とする半導体
デバイスの形成方法。 - 前記非金属シリサイド薄膜上に接するように、前記非金属シリサイド薄膜と同じ金属(
M)からなり且つ再構成構造を持つ高抵抗シリサイド膜を形成する工程と、を具備するこ
とを特徴とする請求項3に記載の半導体デバイスの形成方法。
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JP2004108050A JP4261408B2 (ja) | 2004-03-31 | 2004-03-31 | 半導体デバイスおよび半導体デバイスの製造方法 |
US11/049,661 US7115953B2 (en) | 2004-03-31 | 2005-02-04 | Semiconductor device and method of manufacturing semiconductor device |
CNB2005100524421A CN100492663C (zh) | 2004-03-31 | 2005-02-28 | 半导体器件和半导体器件的制造方法 |
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JP2004108050A JP4261408B2 (ja) | 2004-03-31 | 2004-03-31 | 半導体デバイスおよび半導体デバイスの製造方法 |
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US (1) | US7115953B2 (ja) |
JP (1) | JP4261408B2 (ja) |
CN (1) | CN100492663C (ja) |
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US20060289948A1 (en) * | 2005-06-22 | 2006-12-28 | International Business Machines Corporation | Method to control flatband/threshold voltage in high-k metal gated stacks and structures thereof |
US7432139B2 (en) * | 2005-06-29 | 2008-10-07 | Amberwave Systems Corp. | Methods for forming dielectrics and metal electrodes |
US20070001231A1 (en) * | 2005-06-29 | 2007-01-04 | Amberwave Systems Corporation | Material systems for dielectrics and metal electrodes |
JP4868910B2 (ja) * | 2006-03-30 | 2012-02-01 | 株式会社東芝 | 半導体装置およびその製造方法 |
CN103632940B (zh) * | 2012-08-23 | 2016-04-06 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
US9496373B2 (en) | 2015-04-02 | 2016-11-15 | International Business Machines Corporation | Damage-resistant fin structures and FinFET CMOS |
JP6436234B2 (ja) * | 2015-06-12 | 2018-12-12 | 株式会社豊田自動織機 | CaSi2含有組成物及びシリコン材料の製造方法 |
CN106328509B (zh) * | 2016-08-31 | 2019-05-03 | 上海华力微电子有限公司 | 一种形成mis结构的方法 |
US20190106805A1 (en) * | 2017-10-10 | 2019-04-11 | Wisconsin Alumni Research Foundation | Crystallization of amorphous multicomponent ionic compounds |
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US20050230759A1 (en) | 2005-10-20 |
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US7115953B2 (en) | 2006-10-03 |
CN1677691A (zh) | 2005-10-05 |
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