JPS58175869A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58175869A
JPS58175869A JP57051382A JP5138282A JPS58175869A JP S58175869 A JPS58175869 A JP S58175869A JP 57051382 A JP57051382 A JP 57051382A JP 5138282 A JP5138282 A JP 5138282A JP S58175869 A JPS58175869 A JP S58175869A
Authority
JP
Japan
Prior art keywords
layer
melting point
point metal
high melting
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0216575B2 (enrdf_load_stackoverflow
Inventor
Oku Kuraki
億 久良木
Hideo Oikawa
及川　秀男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57051382A priority Critical patent/JPS58175869A/ja
Priority to US06/479,135 priority patent/US4557036A/en
Priority to FR8305262A priority patent/FR2524709B1/fr
Priority to DE19833311635 priority patent/DE3311635A1/de
Publication of JPS58175869A publication Critical patent/JPS58175869A/ja
Publication of JPH0216575B2 publication Critical patent/JPH0216575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP57051382A 1982-03-31 1982-03-31 半導体装置の製造方法 Granted JPS58175869A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57051382A JPS58175869A (ja) 1982-03-31 1982-03-31 半導体装置の製造方法
US06/479,135 US4557036A (en) 1982-03-31 1983-03-25 Semiconductor device and process for manufacturing the same
FR8305262A FR2524709B1 (fr) 1982-03-31 1983-03-30 Dispositif a semi-conducteur et procede pour sa fabrication
DE19833311635 DE3311635A1 (de) 1982-03-31 1983-03-30 Halbleiterbauelement und verfahren zu dessen herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051382A JPS58175869A (ja) 1982-03-31 1982-03-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58175869A true JPS58175869A (ja) 1983-10-15
JPH0216575B2 JPH0216575B2 (enrdf_load_stackoverflow) 1990-04-17

Family

ID=12885390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051382A Granted JPS58175869A (ja) 1982-03-31 1982-03-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58175869A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0216575B2 (enrdf_load_stackoverflow) 1990-04-17

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