JPS6351536B2 - - Google Patents

Info

Publication number
JPS6351536B2
JPS6351536B2 JP57040109A JP4010982A JPS6351536B2 JP S6351536 B2 JPS6351536 B2 JP S6351536B2 JP 57040109 A JP57040109 A JP 57040109A JP 4010982 A JP4010982 A JP 4010982A JP S6351536 B2 JPS6351536 B2 JP S6351536B2
Authority
JP
Japan
Prior art keywords
melting point
oxide
poly
layer
moo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57040109A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58158930A (ja
Inventor
Oku Kuraki
Hideo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57040109A priority Critical patent/JPS58158930A/ja
Publication of JPS58158930A publication Critical patent/JPS58158930A/ja
Publication of JPS6351536B2 publication Critical patent/JPS6351536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP57040109A 1982-03-16 1982-03-16 高融点金属酸化物の形成方法 Granted JPS58158930A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57040109A JPS58158930A (ja) 1982-03-16 1982-03-16 高融点金属酸化物の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57040109A JPS58158930A (ja) 1982-03-16 1982-03-16 高融点金属酸化物の形成方法

Publications (2)

Publication Number Publication Date
JPS58158930A JPS58158930A (ja) 1983-09-21
JPS6351536B2 true JPS6351536B2 (enrdf_load_stackoverflow) 1988-10-14

Family

ID=12571688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57040109A Granted JPS58158930A (ja) 1982-03-16 1982-03-16 高融点金属酸化物の形成方法

Country Status (1)

Country Link
JP (1) JPS58158930A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0661385A1 (en) * 1991-08-19 1995-07-05 OHMI, Tadahiro Method for forming oxide film
US6146135A (en) * 1991-08-19 2000-11-14 Tadahiro Ohmi Oxide film forming method

Also Published As

Publication number Publication date
JPS58158930A (ja) 1983-09-21

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