JPH0154853B2 - - Google Patents

Info

Publication number
JPH0154853B2
JPH0154853B2 JP57017362A JP1736282A JPH0154853B2 JP H0154853 B2 JPH0154853 B2 JP H0154853B2 JP 57017362 A JP57017362 A JP 57017362A JP 1736282 A JP1736282 A JP 1736282A JP H0154853 B2 JPH0154853 B2 JP H0154853B2
Authority
JP
Japan
Prior art keywords
melting point
silicon
high melting
film
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57017362A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58134427A (ja
Inventor
Hidekazu Okabayashi
Eiji Nagasawa
Mitsutaka Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1736282A priority Critical patent/JPS58134427A/ja
Publication of JPS58134427A publication Critical patent/JPS58134427A/ja
Publication of JPH0154853B2 publication Critical patent/JPH0154853B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP1736282A 1982-02-05 1982-02-05 半導体装置の製造方法 Granted JPS58134427A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1736282A JPS58134427A (ja) 1982-02-05 1982-02-05 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1736282A JPS58134427A (ja) 1982-02-05 1982-02-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58134427A JPS58134427A (ja) 1983-08-10
JPH0154853B2 true JPH0154853B2 (enrdf_load_stackoverflow) 1989-11-21

Family

ID=11941917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1736282A Granted JPS58134427A (ja) 1982-02-05 1982-02-05 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58134427A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61274325A (ja) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6242524A (ja) * 1985-08-20 1987-02-24 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158454A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS58134427A (ja) 1983-08-10

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