JPS58170065A - 薄膜電界効果トランジスタの製造方法 - Google Patents

薄膜電界効果トランジスタの製造方法

Info

Publication number
JPS58170065A
JPS58170065A JP57051421A JP5142182A JPS58170065A JP S58170065 A JPS58170065 A JP S58170065A JP 57051421 A JP57051421 A JP 57051421A JP 5142182 A JP5142182 A JP 5142182A JP S58170065 A JPS58170065 A JP S58170065A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
film
gate electrode
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051421A
Other languages
English (en)
Japanese (ja)
Other versions
JPH059941B2 (enrdf_load_stackoverflow
Inventor
Mitsushi Ikeda
光志 池田
Toshio Aoki
寿男 青木
Koji Suzuki
幸治 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57051421A priority Critical patent/JPS58170065A/ja
Priority to EP82106781A priority patent/EP0071244B1/en
Priority to DE8282106781T priority patent/DE3279239D1/de
Publication of JPS58170065A publication Critical patent/JPS58170065A/ja
Priority to US06/779,648 priority patent/US4700458A/en
Publication of JPH059941B2 publication Critical patent/JPH059941B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Thin Film Transistor (AREA)
JP57051421A 1981-07-27 1982-03-31 薄膜電界効果トランジスタの製造方法 Granted JPS58170065A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57051421A JPS58170065A (ja) 1982-03-31 1982-03-31 薄膜電界効果トランジスタの製造方法
EP82106781A EP0071244B1 (en) 1981-07-27 1982-07-27 Thin-film transistor and method of manufacture therefor
DE8282106781T DE3279239D1 (en) 1981-07-27 1982-07-27 Thin-film transistor and method of manufacture therefor
US06/779,648 US4700458A (en) 1981-07-27 1985-09-24 Method of manufacture thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051421A JPS58170065A (ja) 1982-03-31 1982-03-31 薄膜電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58170065A true JPS58170065A (ja) 1983-10-06
JPH059941B2 JPH059941B2 (enrdf_load_stackoverflow) 1993-02-08

Family

ID=12886454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051421A Granted JPS58170065A (ja) 1981-07-27 1982-03-31 薄膜電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58170065A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192368A (ja) * 1984-03-14 1985-09-30 Toshiba Corp アモルフアスシリコン半導体装置及びその製造方法
JPS60195977A (ja) * 1984-03-16 1985-10-04 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS61145818A (ja) * 1984-12-20 1986-07-03 Sony Corp 半導体薄膜の熱処理方法
JPS6328070A (ja) * 1986-07-21 1988-02-05 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタとその製造方法
JP2002343970A (ja) * 2001-05-10 2002-11-29 Koninkl Philips Electronics Nv 薄膜トランジスタの製造方法並びにそのような製造方法を用いて製造された薄膜トランジスタ及び液晶表示パネル
JP2006049577A (ja) * 2004-08-04 2006-02-16 Sony Corp 電界効果型トランジスタ
JP2006086502A (ja) * 2004-09-15 2006-03-30 Lg Philips Lcd Co Ltd 有機薄膜トランジスタ及び液晶表示装置用基板並びにそれらの製造方法
US7872263B2 (en) 2005-09-14 2011-01-18 Industrial Technology Research Institute Substrate structure for a thin film transistor
JP2011035411A (ja) * 2010-10-06 2011-02-17 Sony Corp 電界効果型トランジスタ
WO2011129227A1 (ja) * 2010-04-14 2011-10-20 シャープ株式会社 半導体装置、半導体装置の製造方法、および表示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730881A (en) * 1980-07-31 1982-02-19 Suwa Seikosha Kk Active matrix substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730881A (en) * 1980-07-31 1982-02-19 Suwa Seikosha Kk Active matrix substrate

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192368A (ja) * 1984-03-14 1985-09-30 Toshiba Corp アモルフアスシリコン半導体装置及びその製造方法
JPS60195977A (ja) * 1984-03-16 1985-10-04 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS61145818A (ja) * 1984-12-20 1986-07-03 Sony Corp 半導体薄膜の熱処理方法
JPS6328070A (ja) * 1986-07-21 1988-02-05 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタとその製造方法
JP2002343970A (ja) * 2001-05-10 2002-11-29 Koninkl Philips Electronics Nv 薄膜トランジスタの製造方法並びにそのような製造方法を用いて製造された薄膜トランジスタ及び液晶表示パネル
JP2006049577A (ja) * 2004-08-04 2006-02-16 Sony Corp 電界効果型トランジスタ
JP2006086502A (ja) * 2004-09-15 2006-03-30 Lg Philips Lcd Co Ltd 有機薄膜トランジスタ及び液晶表示装置用基板並びにそれらの製造方法
US7872263B2 (en) 2005-09-14 2011-01-18 Industrial Technology Research Institute Substrate structure for a thin film transistor
WO2011129227A1 (ja) * 2010-04-14 2011-10-20 シャープ株式会社 半導体装置、半導体装置の製造方法、および表示装置
US9035295B2 (en) 2010-04-14 2015-05-19 Sharp Kabushiki Kaisha Thin film transistor having an oxide semiconductor thin film formed on a multi-source drain electrode
JP2011035411A (ja) * 2010-10-06 2011-02-17 Sony Corp 電界効果型トランジスタ

Also Published As

Publication number Publication date
JPH059941B2 (enrdf_load_stackoverflow) 1993-02-08

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