JPS58170064A - 薄膜電界効果トランジスタの製造方法 - Google Patents

薄膜電界効果トランジスタの製造方法

Info

Publication number
JPS58170064A
JPS58170064A JP57051420A JP5142082A JPS58170064A JP S58170064 A JPS58170064 A JP S58170064A JP 57051420 A JP57051420 A JP 57051420A JP 5142082 A JP5142082 A JP 5142082A JP S58170064 A JPS58170064 A JP S58170064A
Authority
JP
Japan
Prior art keywords
gate
thin film
electrode
forming
north
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051420A
Other languages
English (en)
Japanese (ja)
Other versions
JPH059940B2 (enrdf_load_stackoverflow
Inventor
Mitsushi Ikeda
光志 池田
Toshio Aoki
寿男 青木
Koji Suzuki
幸治 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57051420A priority Critical patent/JPS58170064A/ja
Publication of JPS58170064A publication Critical patent/JPS58170064A/ja
Publication of JPH059940B2 publication Critical patent/JPH059940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP57051420A 1982-03-31 1982-03-31 薄膜電界効果トランジスタの製造方法 Granted JPS58170064A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57051420A JPS58170064A (ja) 1982-03-31 1982-03-31 薄膜電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051420A JPS58170064A (ja) 1982-03-31 1982-03-31 薄膜電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58170064A true JPS58170064A (ja) 1983-10-06
JPH059940B2 JPH059940B2 (enrdf_load_stackoverflow) 1993-02-08

Family

ID=12886426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051420A Granted JPS58170064A (ja) 1982-03-31 1982-03-31 薄膜電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58170064A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0485233A3 (en) * 1990-11-09 1994-09-21 Semiconductor Energy Lab A method of manufacturing insulated-gate field effect transistors
US6589822B1 (en) * 1995-12-09 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for top-gate type and bottom-gate type thin film transistors
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261877B1 (en) 1990-09-11 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
EP0485233A3 (en) * 1990-11-09 1994-09-21 Semiconductor Energy Lab A method of manufacturing insulated-gate field effect transistors
US6177302B1 (en) 1990-11-09 2001-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using multiple sputtering chambers
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7642584B2 (en) 1991-09-25 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6589822B1 (en) * 1995-12-09 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for top-gate type and bottom-gate type thin film transistors

Also Published As

Publication number Publication date
JPH059940B2 (enrdf_load_stackoverflow) 1993-02-08

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