JPS58157151A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS58157151A
JPS58157151A JP57043531A JP4353182A JPS58157151A JP S58157151 A JPS58157151 A JP S58157151A JP 57043531 A JP57043531 A JP 57043531A JP 4353182 A JP4353182 A JP 4353182A JP S58157151 A JPS58157151 A JP S58157151A
Authority
JP
Japan
Prior art keywords
ground
integrated circuit
semiconductor integrated
semiconductor substrate
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57043531A
Other languages
English (en)
Japanese (ja)
Inventor
Hajime Takano
元 高野
Hiromitsu Yamashita
山下　弘光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57043531A priority Critical patent/JPS58157151A/ja
Priority to GB08306917A priority patent/GB2120843A/en
Priority to DE3309223A priority patent/DE3309223C3/de
Publication of JPS58157151A publication Critical patent/JPS58157151A/ja
Priority to US06/808,240 priority patent/US4684973A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP57043531A 1982-03-15 1982-03-15 半導体集積回路装置 Pending JPS58157151A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57043531A JPS58157151A (ja) 1982-03-15 1982-03-15 半導体集積回路装置
GB08306917A GB2120843A (en) 1982-03-15 1983-03-14 Semiconductor integrated circuit device
DE3309223A DE3309223C3 (de) 1982-03-15 1983-03-15 Integrierte Halbleiterschaltung
US06/808,240 US4684973A (en) 1982-03-15 1985-12-13 Semiconductor integrated circuit device having ground connections arranged to eliminate mutual interference between island-disposed electronic circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57043531A JPS58157151A (ja) 1982-03-15 1982-03-15 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPS58157151A true JPS58157151A (ja) 1983-09-19

Family

ID=12666320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57043531A Pending JPS58157151A (ja) 1982-03-15 1982-03-15 半導体集積回路装置

Country Status (4)

Country Link
US (1) US4684973A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58157151A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3309223C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2120843A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0251251A (ja) * 1988-08-15 1990-02-21 Mitsubishi Electric Corp 半導体集積回路
JPH036662A (ja) * 1989-06-02 1991-01-14 Nec Corp ベクトル処理装置
JPH0380527U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1989-11-29 1991-08-19
JPH08213669A (ja) * 1995-02-01 1996-08-20 Toshiba Corp ホール素子および電気量測定装置
US7759920B2 (en) 2006-12-20 2010-07-20 Ricoh Company, Ltd. Switching regulator and semiconductor device having the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3532380A1 (de) * 1985-09-11 1987-03-12 Bosch Gmbh Robert Monolithisch integrierte halbleiteranordnung
JPS6341041A (ja) * 1986-08-06 1988-02-22 Mitsubishi Electric Corp 半導体装置
US5155570A (en) * 1988-06-21 1992-10-13 Sanyo Electric Co., Ltd. Semiconductor integrated circuit having a pattern layout applicable to various custom ICs
US5050238A (en) * 1988-07-12 1991-09-17 Sanyo Electric Co., Ltd. Shielded front end receiver circuit with IF amplifier on an IC
US4947228A (en) * 1988-09-20 1990-08-07 At&T Bell Laboratories Integrated circuit power supply contact
US4998160A (en) * 1989-01-23 1991-03-05 Motorola, Inc. Substrate power supply contact for power integrated circuits
JPH0750708B2 (ja) * 1989-04-26 1995-05-31 株式会社東芝 半導体装置
US6338973B1 (en) * 1997-08-18 2002-01-15 Texas Instruments Incorporated Semiconductor device and method of fabrication

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139390A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Semiconductor integrated circuit device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6606164A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1966-05-06 1967-11-07
US3423650A (en) * 1966-07-01 1969-01-21 Rca Corp Monolithic semiconductor microcircuits with improved means for connecting points of common potential
JPS4819113B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-08-27 1973-06-11
BE756061A (fr) * 1969-09-11 1971-03-11 Philips Nv Dispositif semi-conducteur
DE2523913C3 (de) * 1975-05-30 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Stromversorgungsnetzwerk zur Speisung einer Vielzahl integrierter Schaltkreise
US4032962A (en) * 1975-12-29 1977-06-28 Ibm Corporation High density semiconductor integrated circuit layout
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
DE2616975C3 (de) * 1976-04-17 1981-07-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung von Nutzsignal- und Steuersignalleitungen zum kopplungsarmen Verdrahten von Halbleiterschaltern
JPS5915183B2 (ja) * 1976-08-16 1984-04-07 株式会社日立製作所 マトリツクス配線基板
JPS5618469A (en) * 1979-07-24 1981-02-21 Fujitsu Ltd Semiconductor device
JPS5662352A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Semiconductor integrated circuit device for acoustic amplification circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139390A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Semiconductor integrated circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0251251A (ja) * 1988-08-15 1990-02-21 Mitsubishi Electric Corp 半導体集積回路
JPH036662A (ja) * 1989-06-02 1991-01-14 Nec Corp ベクトル処理装置
JPH0380527U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1989-11-29 1991-08-19
JPH08213669A (ja) * 1995-02-01 1996-08-20 Toshiba Corp ホール素子および電気量測定装置
US7759920B2 (en) 2006-12-20 2010-07-20 Ricoh Company, Ltd. Switching regulator and semiconductor device having the same

Also Published As

Publication number Publication date
US4684973A (en) 1987-08-04
GB8306917D0 (en) 1983-04-20
DE3309223C3 (de) 1994-05-11
DE3309223A1 (de) 1983-10-06
DE3309223C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-05-11
GB2120843A (en) 1983-12-07

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