DE3309223C2 - - Google Patents

Info

Publication number
DE3309223C2
DE3309223C2 DE3309223A DE3309223A DE3309223C2 DE 3309223 C2 DE3309223 C2 DE 3309223C2 DE 3309223 A DE3309223 A DE 3309223A DE 3309223 A DE3309223 A DE 3309223A DE 3309223 C2 DE3309223 C2 DE 3309223C2
Authority
DE
Germany
Prior art keywords
ground
connection electrode
regions
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3309223A
Other languages
German (de)
English (en)
Other versions
DE3309223C3 (de
DE3309223A1 (de
Inventor
Hajime Takano
Hiromitsu Itami Hyogo Jp Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3309223A1 publication Critical patent/DE3309223A1/de
Application granted granted Critical
Publication of DE3309223C3 publication Critical patent/DE3309223C3/de
Publication of DE3309223C2 publication Critical patent/DE3309223C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE3309223A 1982-03-15 1983-03-15 Integrierte Halbleiterschaltung Expired - Lifetime DE3309223C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57043531A JPS58157151A (ja) 1982-03-15 1982-03-15 半導体集積回路装置

Publications (3)

Publication Number Publication Date
DE3309223A1 DE3309223A1 (de) 1983-10-06
DE3309223C3 DE3309223C3 (de) 1994-05-11
DE3309223C2 true DE3309223C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-05-11

Family

ID=12666320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3309223A Expired - Lifetime DE3309223C3 (de) 1982-03-15 1983-03-15 Integrierte Halbleiterschaltung

Country Status (4)

Country Link
US (1) US4684973A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58157151A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3309223C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2120843A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3532380A1 (de) * 1985-09-11 1987-03-12 Bosch Gmbh Robert Monolithisch integrierte halbleiteranordnung
JPS6341041A (ja) * 1986-08-06 1988-02-22 Mitsubishi Electric Corp 半導体装置
US5155570A (en) * 1988-06-21 1992-10-13 Sanyo Electric Co., Ltd. Semiconductor integrated circuit having a pattern layout applicable to various custom ICs
US5050238A (en) * 1988-07-12 1991-09-17 Sanyo Electric Co., Ltd. Shielded front end receiver circuit with IF amplifier on an IC
JPH0251251A (ja) * 1988-08-15 1990-02-21 Mitsubishi Electric Corp 半導体集積回路
US4947228A (en) * 1988-09-20 1990-08-07 At&T Bell Laboratories Integrated circuit power supply contact
US4998160A (en) * 1989-01-23 1991-03-05 Motorola, Inc. Substrate power supply contact for power integrated circuits
JPH0750708B2 (ja) * 1989-04-26 1995-05-31 株式会社東芝 半導体装置
JPH036662A (ja) * 1989-06-02 1991-01-14 Nec Corp ベクトル処理装置
JPH0380527U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1989-11-29 1991-08-19
JP3431326B2 (ja) * 1995-02-01 2003-07-28 株式会社東芝 ホール素子および電気量測定装置
US6338973B1 (en) * 1997-08-18 2002-01-15 Texas Instruments Incorporated Semiconductor device and method of fabrication
JP2008154419A (ja) 2006-12-20 2008-07-03 Ricoh Co Ltd スイッチングレギュレータ及びスイッチングレギュレータを構成する半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6606164A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1966-05-06 1967-11-07
US3423650A (en) * 1966-07-01 1969-01-21 Rca Corp Monolithic semiconductor microcircuits with improved means for connecting points of common potential
JPS4819113B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-08-27 1973-06-11
BE756061A (fr) * 1969-09-11 1971-03-11 Philips Nv Dispositif semi-conducteur
DE2523913C3 (de) * 1975-05-30 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Stromversorgungsnetzwerk zur Speisung einer Vielzahl integrierter Schaltkreise
US4032962A (en) * 1975-12-29 1977-06-28 Ibm Corporation High density semiconductor integrated circuit layout
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
DE2616975C3 (de) * 1976-04-17 1981-07-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung von Nutzsignal- und Steuersignalleitungen zum kopplungsarmen Verdrahten von Halbleiterschaltern
JPS52139390A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Semiconductor integrated circuit device
JPS5915183B2 (ja) * 1976-08-16 1984-04-07 株式会社日立製作所 マトリツクス配線基板
JPS5618469A (en) * 1979-07-24 1981-02-21 Fujitsu Ltd Semiconductor device
JPS5662352A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Semiconductor integrated circuit device for acoustic amplification circuit

Also Published As

Publication number Publication date
US4684973A (en) 1987-08-04
JPS58157151A (ja) 1983-09-19
GB8306917D0 (en) 1983-04-20
DE3309223C3 (de) 1994-05-11
DE3309223A1 (de) 1983-10-06
GB2120843A (en) 1983-12-07

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8363 Opposition against the patent
8380 Miscellaneous part iii

Free format text: IN HEFT 3/91, SEITE 637, SP.3: DIE VEROEFFENTLICHUNG IST ZU STREICHEN

8366 Restricted maintained after opposition proceedings
8305 Restricted maintenance of patent after opposition
D4 Patent maintained restricted
8320 Willingness to grant licences declared (paragraph 23)