JPS58156598A - 結晶成長法 - Google Patents

結晶成長法

Info

Publication number
JPS58156598A
JPS58156598A JP57037526A JP3752682A JPS58156598A JP S58156598 A JPS58156598 A JP S58156598A JP 57037526 A JP57037526 A JP 57037526A JP 3752682 A JP3752682 A JP 3752682A JP S58156598 A JPS58156598 A JP S58156598A
Authority
JP
Japan
Prior art keywords
growth
crystal
pressure
temperature
vapor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57037526A
Other languages
English (en)
Japanese (ja)
Other versions
JPS612639B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP57037526A priority Critical patent/JPS58156598A/ja
Priority to DE8383301264T priority patent/DE3376924D1/de
Priority to CA000423088A priority patent/CA1212018A/en
Priority to EP83301264A priority patent/EP0090521B1/en
Publication of JPS58156598A publication Critical patent/JPS58156598A/ja
Publication of JPS612639B2 publication Critical patent/JPS612639B2/ja
Priority to US06/904,759 priority patent/US4692194A/en
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y10S117/907—Refluxing atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/915—Amphoteric doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP57037526A 1982-03-09 1982-03-09 結晶成長法 Granted JPS58156598A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57037526A JPS58156598A (ja) 1982-03-09 1982-03-09 結晶成長法
DE8383301264T DE3376924D1 (en) 1982-03-09 1983-03-08 A method of performing solution growth of a group iii-v compound semiconductor crystal layer under control of the conductivity type thereof
CA000423088A CA1212018A (en) 1982-03-09 1983-03-08 Method of performing solution growth of group iii-v compound semiconductor crystal layer under control of conductivity type thereof
EP83301264A EP0090521B1 (en) 1982-03-09 1983-03-08 A method of performing solution growth of a group iii-v compound semiconductor crystal layer under control of the conductivity type thereof
US06/904,759 US4692194A (en) 1982-03-09 1986-09-25 Method of performing solution growth of a GaAs compound semiconductor crystal layer under control of conductivity type thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57037526A JPS58156598A (ja) 1982-03-09 1982-03-09 結晶成長法

Publications (2)

Publication Number Publication Date
JPS58156598A true JPS58156598A (ja) 1983-09-17
JPS612639B2 JPS612639B2 (enExample) 1986-01-27

Family

ID=12499980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57037526A Granted JPS58156598A (ja) 1982-03-09 1982-03-09 結晶成長法

Country Status (5)

Country Link
US (1) US4692194A (enExample)
EP (1) EP0090521B1 (enExample)
JP (1) JPS58156598A (enExample)
CA (1) CA1212018A (enExample)
DE (1) DE3376924D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091386A (ko) * 2000-03-15 2001-10-23 오명환 ＶＧＦ법에 의한 ＧａＡｓ 단결정 성장시 단결정 확보를위한 Ａｓ 증기압 제어방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863183A (ja) * 1981-10-09 1983-04-14 Semiconductor Res Found ２−６族間化合物の結晶成長法
US6009113A (en) * 1994-07-18 1999-12-28 Sharp Kabushiki Kaisha Semiconductor laser device having clad and contact layers respectively doped with Mg and method for fabricating the same
JP3195715B2 (ja) * 1994-07-18 2001-08-06 シャープ株式会社 半導体レーザ素子及びその製造方法
US6902619B2 (en) * 2001-06-28 2005-06-07 Ntu Ventures Pte. Ltd. Liquid phase epitaxy
WO2019147602A1 (en) 2018-01-29 2019-08-01 Northwestern University Amphoteric p-type and n-type doping of group iii-vi semiconductors with group-iv atoms

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600240A (en) * 1968-12-12 1971-08-17 Ibm Epitaxial growth from solution with amphoteric dopant
NL6916855A (enExample) * 1969-02-19 1970-08-21
NL161919C (nl) * 1969-06-20 1980-03-17 Sharp Kk Werkwijze voor het vervaardigen van een halfgeleider- inrichting, die een p,n-overgang bevat.
FR2296264A1 (fr) * 1974-12-24 1976-07-23 Radiotechnique Compelec Procede de realisation de dispositif semi-conducteur a heterojonction
US4142924A (en) * 1976-12-16 1979-03-06 Massachusetts Institute Of Technology Fast-sweep growth method for growing layers using liquid phase epitaxy
US4384398A (en) * 1981-10-26 1983-05-24 Bell Telephone Laboratories, Incorporated Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091386A (ko) * 2000-03-15 2001-10-23 오명환 ＶＧＦ법에 의한 ＧａＡｓ 단결정 성장시 단결정 확보를위한 Ａｓ 증기압 제어방법

Also Published As

Publication number Publication date
CA1212018A (en) 1986-09-30
EP0090521A2 (en) 1983-10-05
EP0090521B1 (en) 1988-06-01
US4692194A (en) 1987-09-08
EP0090521A3 (en) 1986-01-22
DE3376924D1 (en) 1988-07-07
JPS612639B2 (enExample) 1986-01-27

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