JPH0557239B2 - - Google Patents

Info

Publication number
JPH0557239B2
JPH0557239B2 JP60041881A JP4188185A JPH0557239B2 JP H0557239 B2 JPH0557239 B2 JP H0557239B2 JP 60041881 A JP60041881 A JP 60041881A JP 4188185 A JP4188185 A JP 4188185A JP H0557239 B2 JPH0557239 B2 JP H0557239B2
Authority
JP
Japan
Prior art keywords
concentration
gaas
resistance
crystal
impurity levels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60041881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61201700A (ja
Inventor
Masamichi Yokogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP60041881A priority Critical patent/JPS61201700A/ja
Publication of JPS61201700A publication Critical patent/JPS61201700A/ja
Publication of JPH0557239B2 publication Critical patent/JPH0557239B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP60041881A 1985-03-05 1985-03-05 高抵抗ＧａＡｓ結晶およびその製造方法 Granted JPS61201700A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60041881A JPS61201700A (ja) 1985-03-05 1985-03-05 高抵抗ＧａＡｓ結晶およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60041881A JPS61201700A (ja) 1985-03-05 1985-03-05 高抵抗ＧａＡｓ結晶およびその製造方法

Publications (2)

Publication Number Publication Date
JPS61201700A JPS61201700A (ja) 1986-09-06
JPH0557239B2 true JPH0557239B2 (enExample) 1993-08-23

Family

ID=12620613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60041881A Granted JPS61201700A (ja) 1985-03-05 1985-03-05 高抵抗ＧａＡｓ結晶およびその製造方法

Country Status (1)

Country Link
JP (1) JPS61201700A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110373710A (zh) * 2019-07-09 2019-10-25 有研光电新材料有限责任公司 水平法砷化镓单晶尾部位错密度的降低方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222999A (ja) * 1985-03-27 1986-10-03 Dowa Mining Co Ltd ３−ｖ族化合物半導体単結晶の電気的特性改良方法
JPS63195199A (ja) * 1987-02-05 1988-08-12 Dowa Mining Co Ltd ガリウム砒素結晶の製造方法
JPH0714077U (ja) * 1993-03-31 1995-03-10 利夫 原田 開き戸
EP3795725B1 (en) * 2014-07-17 2021-08-18 Sumitomo Electric Industries, Ltd. N-type gaas single crystal
CN113847183B (zh) * 2021-09-23 2022-09-30 上海鑫歆源电子有限公司 一种热量控制模块、驱动电路及点火线圈驱动器

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT.=1982 *
SEMI-INSULATING 3-5 MATERIALS *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110373710A (zh) * 2019-07-09 2019-10-25 有研光电新材料有限责任公司 水平法砷化镓单晶尾部位错密度的降低方法

Also Published As

Publication number Publication date
JPS61201700A (ja) 1986-09-06

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Legal Events

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