JPH0557240B2 - - Google Patents

Info

Publication number
JPH0557240B2
JPH0557240B2 JP62194128A JP19412887A JPH0557240B2 JP H0557240 B2 JPH0557240 B2 JP H0557240B2 JP 62194128 A JP62194128 A JP 62194128A JP 19412887 A JP19412887 A JP 19412887A JP H0557240 B2 JPH0557240 B2 JP H0557240B2
Authority
JP
Japan
Prior art keywords
carbon
concentration
crystal
gaas
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62194128A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6437833A (en
Inventor
Hiromasa Yamamoto
Manabu Kano
Osamu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIKKO KYOSEKI KK
NITSUKO KYOSEKI KK
Original Assignee
NIKKO KYOSEKI KK
NITSUKO KYOSEKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIKKO KYOSEKI KK, NITSUKO KYOSEKI KK filed Critical NIKKO KYOSEKI KK
Priority to JP62194128A priority Critical patent/JPS6437833A/ja
Publication of JPS6437833A publication Critical patent/JPS6437833A/ja
Publication of JPH0557240B2 publication Critical patent/JPH0557240B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP62194128A 1987-08-03 1987-08-03 Semi-insulating gaas single crystal Granted JPS6437833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62194128A JPS6437833A (en) 1987-08-03 1987-08-03 Semi-insulating gaas single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62194128A JPS6437833A (en) 1987-08-03 1987-08-03 Semi-insulating gaas single crystal

Publications (2)

Publication Number Publication Date
JPS6437833A JPS6437833A (en) 1989-02-08
JPH0557240B2 true JPH0557240B2 (enExample) 1993-08-23

Family

ID=16319372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62194128A Granted JPS6437833A (en) 1987-08-03 1987-08-03 Semi-insulating gaas single crystal

Country Status (1)

Country Link
JP (1) JPS6437833A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6479087A (en) * 1987-09-21 1989-03-24 Hitachi Cable Gallium arsenide single crystal having low dislocation density and its production
US4999082A (en) * 1989-09-14 1991-03-12 Akzo America Inc. Process for producing monocrystalline group II-IV or group III-V compounds and products thereof
JP3201305B2 (ja) * 1996-04-26 2001-08-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JP3596337B2 (ja) * 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法
JP4324467B2 (ja) * 2001-07-05 2009-09-02 エーエックスティー，インコーポレーテッド 炭素ドーピング、抵抗率制御、温度勾配制御を伴う、剛性サポートを備える半導体結晶を成長させるための方法および装置
CN105140365B (zh) * 2015-08-18 2018-03-06 西安电子科技大学 基于c面蓝宝石衬底上Ga极性黄光LED结构及其制作方法
CN105098017B (zh) * 2015-08-18 2018-03-06 西安电子科技大学 基于c面蓝宝石衬底上N面黄光LED结构及其制作方法

Also Published As

Publication number Publication date
JPS6437833A (en) 1989-02-08

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Legal Events

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LAPS Cancellation because of no payment of annual fees