JPS6437833A - Semi-insulating gaas single crystal - Google Patents
Semi-insulating gaas single crystalInfo
- Publication number
- JPS6437833A JPS6437833A JP19412887A JP19412887A JPS6437833A JP S6437833 A JPS6437833 A JP S6437833A JP 19412887 A JP19412887 A JP 19412887A JP 19412887 A JP19412887 A JP 19412887A JP S6437833 A JPS6437833 A JP S6437833A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- crystal
- fixed quantity
- concentration
- donor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19412887A JPS6437833A (en) | 1987-08-03 | 1987-08-03 | Semi-insulating gaas single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19412887A JPS6437833A (en) | 1987-08-03 | 1987-08-03 | Semi-insulating gaas single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6437833A true JPS6437833A (en) | 1989-02-08 |
JPH0557240B2 JPH0557240B2 (ja) | 1993-08-23 |
Family
ID=16319372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19412887A Granted JPS6437833A (en) | 1987-08-03 | 1987-08-03 | Semi-insulating gaas single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437833A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6479087A (en) * | 1987-09-21 | 1989-03-24 | Hitachi Cable | Gallium arsenide single crystal having low dislocation density and its production |
EP0417843A2 (en) * | 1989-09-14 | 1991-03-20 | Akzo Nobel N.V. | Process for producing monocrystalline group II-VI or group III-V compounds and products thereof |
EP0803593A1 (en) * | 1996-04-26 | 1997-10-29 | Sumitomo Electric Industries, Ltd. | Method of preparing group III-V compound semiconductor crystal |
EP1428912A3 (en) * | 1998-03-25 | 2004-06-23 | Sumitomo Electric Industries, Ltd. | Method of preparing a compound semiconductor crystal doped with carbon |
US6896729B2 (en) | 2001-07-05 | 2005-05-24 | Axt, Inc. | Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
CN105098017A (zh) * | 2015-08-18 | 2015-11-25 | 西安电子科技大学 | 基于c面蓝宝石衬底上N面黄光LED材料及其制作方法 |
CN105140365A (zh) * | 2015-08-18 | 2015-12-09 | 西安电子科技大学 | 基于c面蓝宝石衬底上Ga极性黄光LED材料及其制作方法 |
-
1987
- 1987-08-03 JP JP19412887A patent/JPS6437833A/ja active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6479087A (en) * | 1987-09-21 | 1989-03-24 | Hitachi Cable | Gallium arsenide single crystal having low dislocation density and its production |
EP0417843A2 (en) * | 1989-09-14 | 1991-03-20 | Akzo Nobel N.V. | Process for producing monocrystalline group II-VI or group III-V compounds and products thereof |
JPH03122097A (ja) * | 1989-09-14 | 1991-05-24 | Akzo Nv | 単結晶の2‐6族または3‐5族化合物の製造法及びそれより作られる製品 |
USRE41551E1 (en) * | 1996-04-26 | 2010-08-24 | Sumitomo Electric Industries, Ltd. | Method of preparing group III-V compound semiconductor crystal |
US6007622A (en) * | 1996-04-26 | 1999-12-28 | Sumitomo Electric Industries, Ltd. | Method of preparing group III-V compound semiconductor crystal |
USRE39778E1 (en) * | 1996-04-26 | 2007-08-21 | Sumitomo Electric Industries, Ltd. | Method of preparing group III-V compound semiconductor crystal |
EP1288342A3 (en) * | 1996-04-26 | 2009-01-28 | Sumitomo Electric Industries, Ltd. | Method of preparing group III-V compound semiconductor crystal |
EP0803593A1 (en) * | 1996-04-26 | 1997-10-29 | Sumitomo Electric Industries, Ltd. | Method of preparing group III-V compound semiconductor crystal |
EP1428912A3 (en) * | 1998-03-25 | 2004-06-23 | Sumitomo Electric Industries, Ltd. | Method of preparing a compound semiconductor crystal doped with carbon |
US6896729B2 (en) | 2001-07-05 | 2005-05-24 | Axt, Inc. | Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
JP2012126644A (ja) * | 2001-07-05 | 2012-07-05 | Axt Inc | 炭素ドーピング、抵抗率制御、温度勾配制御を伴う、剛性サポートを備える半導体結晶を成長させるための方法および装置 |
CN105098017A (zh) * | 2015-08-18 | 2015-11-25 | 西安电子科技大学 | 基于c面蓝宝石衬底上N面黄光LED材料及其制作方法 |
CN105140365A (zh) * | 2015-08-18 | 2015-12-09 | 西安电子科技大学 | 基于c面蓝宝石衬底上Ga极性黄光LED材料及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0557240B2 (ja) | 1993-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |