JPS58147113A - ド−ピングされた酸化フイルムおよびド−ピングされた半導体の製造方法 - Google Patents

ド−ピングされた酸化フイルムおよびド−ピングされた半導体の製造方法

Info

Publication number
JPS58147113A
JPS58147113A JP58019892A JP1989283A JPS58147113A JP S58147113 A JPS58147113 A JP S58147113A JP 58019892 A JP58019892 A JP 58019892A JP 1989283 A JP1989283 A JP 1989283A JP S58147113 A JPS58147113 A JP S58147113A
Authority
JP
Japan
Prior art keywords
compound
solution
doping
polyorganosiloxane
substrate material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58019892A
Other languages
English (en)
Japanese (ja)
Inventor
イアン・メルヴイル・ト−マス
ジエ−ムズ・ジヨゼフ・テイルマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OI Glass Inc
Original Assignee
Owens Illinois Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Owens Illinois Inc filed Critical Owens Illinois Inc
Publication of JPS58147113A publication Critical patent/JPS58147113A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P32/141—
    • H10P32/171—
    • H10P32/19—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Polymers (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Formation Of Insulating Films (AREA)
JP58019892A 1982-02-11 1983-02-10 ド−ピングされた酸化フイルムおよびド−ピングされた半導体の製造方法 Pending JPS58147113A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US347834 1982-02-11
US06/347,834 US4571366A (en) 1982-02-11 1982-02-11 Process for forming a doped oxide film and doped semiconductor

Publications (1)

Publication Number Publication Date
JPS58147113A true JPS58147113A (ja) 1983-09-01

Family

ID=23365481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58019892A Pending JPS58147113A (ja) 1982-02-11 1983-02-10 ド−ピングされた酸化フイルムおよびド−ピングされた半導体の製造方法

Country Status (4)

Country Link
US (1) US4571366A (enExample)
JP (1) JPS58147113A (enExample)
DE (1) DE3300323A1 (enExample)
FR (1) FR2521349B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092610A (ja) * 1983-10-26 1985-05-24 Rohm Co Ltd ボロン拡散量の制御方法
JP2014103164A (ja) * 2012-11-16 2014-06-05 Tokyo Ohka Kogyo Co Ltd 不純物拡散成分の拡散方法、及び太陽電池の製造方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4729962A (en) * 1986-03-24 1988-03-08 The United States Of America As Represented By The United States Department Of Energy Semiconductor junction formation by directed heat
US4749615A (en) * 1986-10-31 1988-06-07 Stemcor Corporation Semiconductor dopant source
US5028566A (en) * 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films
IT1227245B (it) * 1988-09-29 1991-03-27 Sgs Thomson Microelectronics Strato dielettrico di prima interconnessione per dispositivi elettronici a semiconduttore
JP3131436B2 (ja) * 1990-02-26 2001-01-31 株式会社東芝 半導体装置の製造方法
US5527872A (en) * 1990-09-14 1996-06-18 At&T Global Information Solutions Company Electronic device with a spin-on glass dielectric layer
US5472488A (en) * 1990-09-14 1995-12-05 Hyundai Electronics America Coating solution for forming glassy layers
US5322805A (en) * 1992-10-16 1994-06-21 Ncr Corporation Method for forming a bipolar emitter using doped SOG
US5308790A (en) * 1992-10-16 1994-05-03 Ncr Corporation Selective sidewall diffusion process using doped SOG
US5312512A (en) * 1992-10-23 1994-05-17 Ncr Corporation Global planarization using SOG and CMP
US5340752A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method for forming a bipolar transistor using doped SOG
US5340770A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method of making a shallow junction by using first and second SOG layers
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
JPH08119787A (ja) * 1994-10-14 1996-05-14 Komatsu Electron Metals Co Ltd 連続チャージ法におけるドーパント供給方法およびドーパント組成物
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
JP2005260040A (ja) * 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
US8324089B2 (en) * 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
JP6279878B2 (ja) 2013-10-31 2018-02-14 東京応化工業株式会社 太陽電池の製造方法
JP6306855B2 (ja) * 2013-10-31 2018-04-04 東京応化工業株式会社 太陽電池の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135263A (en) * 1977-04-28 1978-11-25 Nec Corp Production of semiconductor device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces
US3834939A (en) * 1970-02-19 1974-09-10 Ibm Method of forming doped silicon oxide layers on substrates and paint-on compositions useful in such methods
FR2123652A5 (enExample) * 1970-02-19 1972-09-15 Ibm
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
US3658584A (en) * 1970-09-21 1972-04-25 Monsanto Co Semiconductor doping compositions
US3928225A (en) * 1971-04-08 1975-12-23 Semikron Gleichrichterbau Glass forming mixture with boron as the doping material for producing conductivity zones in semiconductor bodies by means of diffusion
US3798081A (en) * 1972-02-14 1974-03-19 Ibm Method for diffusing as into silicon from a solid phase
US3837873A (en) * 1972-05-31 1974-09-24 Texas Instruments Inc Compositions for use in forming a doped oxide film
US3915766A (en) * 1972-05-31 1975-10-28 Texas Instruments Inc Composition for use in forming a doped oxide film
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors
US4152286A (en) * 1977-09-13 1979-05-01 Texas Instruments Incorporated Composition and method for forming a doped oxide film
US4243427A (en) * 1977-11-21 1981-01-06 Trw Inc. High concentration phosphoro-silica spin-on dopant
US4236948A (en) * 1979-03-09 1980-12-02 Demetron Gesellschaft Fur Elektronik Werkstoffe Mbh Process for doping semiconductor crystals
US4251285A (en) * 1979-08-14 1981-02-17 Westinghouse Electric Corp. Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
GB2114365B (en) * 1982-01-28 1986-08-06 Owens Illinois Inc Process for forming a doped oxide film and composite article

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135263A (en) * 1977-04-28 1978-11-25 Nec Corp Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092610A (ja) * 1983-10-26 1985-05-24 Rohm Co Ltd ボロン拡散量の制御方法
JP2014103164A (ja) * 2012-11-16 2014-06-05 Tokyo Ohka Kogyo Co Ltd 不純物拡散成分の拡散方法、及び太陽電池の製造方法

Also Published As

Publication number Publication date
DE3300323C2 (enExample) 1989-06-08
DE3300323A1 (de) 1983-08-18
US4571366A (en) 1986-02-18
FR2521349B1 (fr) 1988-04-22
FR2521349A1 (fr) 1983-08-12

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