JPS58124278A - ショットキゲート電界効果トランジスタの製造方法 - Google Patents

ショットキゲート電界効果トランジスタの製造方法

Info

Publication number
JPS58124278A
JPS58124278A JP57007782A JP778282A JPS58124278A JP S58124278 A JPS58124278 A JP S58124278A JP 57007782 A JP57007782 A JP 57007782A JP 778282 A JP778282 A JP 778282A JP S58124278 A JPS58124278 A JP S58124278A
Authority
JP
Japan
Prior art keywords
mask
forming
layer
active layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57007782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0354462B2 (enrdf_load_stackoverflow
Inventor
Toshiki Ehata
敏樹 江畑
Kenichi Kikuchi
健一 菊地
Hideki Hayashi
秀樹 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP57007782A priority Critical patent/JPS58124278A/ja
Publication of JPS58124278A publication Critical patent/JPS58124278A/ja
Publication of JPH0354462B2 publication Critical patent/JPH0354462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57007782A 1982-01-20 1982-01-20 ショットキゲート電界効果トランジスタの製造方法 Granted JPS58124278A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57007782A JPS58124278A (ja) 1982-01-20 1982-01-20 ショットキゲート電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57007782A JPS58124278A (ja) 1982-01-20 1982-01-20 ショットキゲート電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58124278A true JPS58124278A (ja) 1983-07-23
JPH0354462B2 JPH0354462B2 (enrdf_load_stackoverflow) 1991-08-20

Family

ID=11675238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57007782A Granted JPS58124278A (ja) 1982-01-20 1982-01-20 ショットキゲート電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58124278A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123779A (ja) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123779A (ja) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPH0354462B2 (enrdf_load_stackoverflow) 1991-08-20

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