JPS58112326A - 複合ビ−ムアニ−ル方法 - Google Patents

複合ビ−ムアニ−ル方法

Info

Publication number
JPS58112326A
JPS58112326A JP20954181A JP20954181A JPS58112326A JP S58112326 A JPS58112326 A JP S58112326A JP 20954181 A JP20954181 A JP 20954181A JP 20954181 A JP20954181 A JP 20954181A JP S58112326 A JPS58112326 A JP S58112326A
Authority
JP
Japan
Prior art keywords
annealing
electron beam
annealing method
radar
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20954181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0379861B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Seiichiro Kawamura
河村　誠一郎
Junji Sakurai
桜井　潤治
Motoo Nakano
元雄 中野
Hiroshi Yasuda
洋 安田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20954181A priority Critical patent/JPS58112326A/ja
Publication of JPS58112326A publication Critical patent/JPS58112326A/ja
Publication of JPH0379861B2 publication Critical patent/JPH0379861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP20954181A 1981-12-26 1981-12-26 複合ビ−ムアニ−ル方法 Granted JPS58112326A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20954181A JPS58112326A (ja) 1981-12-26 1981-12-26 複合ビ−ムアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20954181A JPS58112326A (ja) 1981-12-26 1981-12-26 複合ビ−ムアニ−ル方法

Publications (2)

Publication Number Publication Date
JPS58112326A true JPS58112326A (ja) 1983-07-04
JPH0379861B2 JPH0379861B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-20

Family

ID=16574507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20954181A Granted JPS58112326A (ja) 1981-12-26 1981-12-26 複合ビ−ムアニ−ル方法

Country Status (1)

Country Link
JP (1) JPS58112326A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092607A (ja) * 1983-10-27 1985-05-24 Agency Of Ind Science & Technol 電子ビ−ムアニ−ル装置
JPS6130025A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol 単結晶半導体薄膜の製造方法
JPS6130027A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol 単結晶半導体薄膜の製造装置
JPS63119591A (ja) * 1986-10-09 1988-05-24 アモコ・コーポレーション 薄い固体フィルムからなる層状構造体の選択的混合方法
JPH0274832A (ja) * 1988-09-10 1990-03-14 Kurabo Ind Ltd 色順判定方式
JP2006068505A (ja) * 2004-08-03 2006-03-16 Ameeta:Kk 芳香拡散装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148430A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148430A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092607A (ja) * 1983-10-27 1985-05-24 Agency Of Ind Science & Technol 電子ビ−ムアニ−ル装置
JPS6130025A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol 単結晶半導体薄膜の製造方法
JPS6130027A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol 単結晶半導体薄膜の製造装置
JPS63119591A (ja) * 1986-10-09 1988-05-24 アモコ・コーポレーション 薄い固体フィルムからなる層状構造体の選択的混合方法
JPH0274832A (ja) * 1988-09-10 1990-03-14 Kurabo Ind Ltd 色順判定方式
JP2006068505A (ja) * 2004-08-03 2006-03-16 Ameeta:Kk 芳香拡散装置

Also Published As

Publication number Publication date
JPH0379861B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-20

Similar Documents

Publication Publication Date Title
JPS6412088B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS59152618A (ja) 加熱処理方法およびその装置
JPS6411712B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4474625A (en) Method for superficial annealing of semiconductor materials using pulsed micro-wave energy
JPS58112326A (ja) 複合ビ−ムアニ−ル方法
US4547256A (en) Method for thermally treating a semiconductor substrate
JPS59211221A (ja) イオン注入した半導体の熱処理方法
JPS5917253A (ja) 半導体ウエハの熱処理方法
JPS5870536A (ja) レ−ザアニ−ル方法
CA1129969A (en) Dual wavelength optical annealing of materials
JPH10256178A (ja) レーザ熱処理方法及びその装置
JPS62229924A (ja) 半導体の改質処理方法
JPH038101B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2002252173A (ja) レーザーアニール方法
JPS59139624A (ja) 試料の加熱方法
Cline Silicon thin films formed on an insulator by recrystallization
JPH02239102A (ja) 酸化物超電導体の製造方法
JPS63239843A (ja) レーザ利用配線形成方法
JPH021531B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6244847B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
Givargizov Experimental Techniques for Oriented Crystallization on Amorphous Substrates
JPS61108121A (ja) 半導体装置の製造方法
JPS63227015A (ja) ランプ加熱装置
JPH04334018A (ja) 熱処理装置
JPS5835917A (ja) 半導体装置の製造方法