JPS58111324A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58111324A
JPS58111324A JP20921981A JP20921981A JPS58111324A JP S58111324 A JPS58111324 A JP S58111324A JP 20921981 A JP20921981 A JP 20921981A JP 20921981 A JP20921981 A JP 20921981A JP S58111324 A JPS58111324 A JP S58111324A
Authority
JP
Japan
Prior art keywords
substrate
annealing
ion implantation
plasma
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20921981A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0451971B2 (enrdf_load_stackoverflow
Inventor
Nobuyoshi Kashu
夏秋　信義
Katsumi Tokikuchi
克己 登木口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20921981A priority Critical patent/JPS58111324A/ja
Publication of JPS58111324A publication Critical patent/JPS58111324A/ja
Publication of JPH0451971B2 publication Critical patent/JPH0451971B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Element Separation (AREA)
JP20921981A 1981-12-25 1981-12-25 半導体装置の製造方法 Granted JPS58111324A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20921981A JPS58111324A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20921981A JPS58111324A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58111324A true JPS58111324A (ja) 1983-07-02
JPH0451971B2 JPH0451971B2 (enrdf_load_stackoverflow) 1992-08-20

Family

ID=16569312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20921981A Granted JPS58111324A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58111324A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138973A (ja) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd 絶縁ゲ−ト型電界効果トランジスタの製造方法
US4684319A (en) * 1985-01-29 1987-08-04 Toyota Jidosha Kabushiki Kaisha Turbocharger with variable nozzle mechanism
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JPH01111320A (ja) * 1987-10-26 1989-04-28 Matsushita Electric Ind Co Ltd 不純物の拡散方法
JP2005277220A (ja) * 2004-03-25 2005-10-06 Matsushita Electric Ind Co Ltd 不純物導入方法、不純物導入装置およびこの方法を用いて形成された半導体装置
JP2006510196A (ja) * 2002-12-12 2006-03-23 エピオン コーポレーション 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138921A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Method of formation for impurity introduction layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138921A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Method of formation for impurity introduction layer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138973A (ja) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd 絶縁ゲ−ト型電界効果トランジスタの製造方法
US4684319A (en) * 1985-01-29 1987-08-04 Toyota Jidosha Kabushiki Kaisha Turbocharger with variable nozzle mechanism
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JPH01111320A (ja) * 1987-10-26 1989-04-28 Matsushita Electric Ind Co Ltd 不純物の拡散方法
JP2006510196A (ja) * 2002-12-12 2006-03-23 エピオン コーポレーション 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法
JP2005277220A (ja) * 2004-03-25 2005-10-06 Matsushita Electric Ind Co Ltd 不純物導入方法、不純物導入装置およびこの方法を用いて形成された半導体装置

Also Published As

Publication number Publication date
JPH0451971B2 (enrdf_load_stackoverflow) 1992-08-20

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