JPS58110673A - 反応性スパツタリング装置 - Google Patents

反応性スパツタリング装置

Info

Publication number
JPS58110673A
JPS58110673A JP20689981A JP20689981A JPS58110673A JP S58110673 A JPS58110673 A JP S58110673A JP 20689981 A JP20689981 A JP 20689981A JP 20689981 A JP20689981 A JP 20689981A JP S58110673 A JPS58110673 A JP S58110673A
Authority
JP
Japan
Prior art keywords
substrate
target
reactive gas
reactive
partition wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20689981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6127462B2 (https=
Inventor
Tokusuke Takagaki
高垣　篤補
Yoshio Nakagawa
宣雄 中川
Katsuo Abe
勝男 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20689981A priority Critical patent/JPS58110673A/ja
Publication of JPS58110673A publication Critical patent/JPS58110673A/ja
Publication of JPS6127462B2 publication Critical patent/JPS6127462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP20689981A 1981-12-23 1981-12-23 反応性スパツタリング装置 Granted JPS58110673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20689981A JPS58110673A (ja) 1981-12-23 1981-12-23 反応性スパツタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20689981A JPS58110673A (ja) 1981-12-23 1981-12-23 反応性スパツタリング装置

Publications (2)

Publication Number Publication Date
JPS58110673A true JPS58110673A (ja) 1983-07-01
JPS6127462B2 JPS6127462B2 (https=) 1986-06-25

Family

ID=16530898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20689981A Granted JPS58110673A (ja) 1981-12-23 1981-12-23 反応性スパツタリング装置

Country Status (1)

Country Link
JP (1) JPS58110673A (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2551460A1 (fr) * 1983-09-02 1985-03-08 Leybold Heraeus Gmbh & Co Kg Procede et dispositif de depot par pulverisation reactive de composes de metaux et de semi-conducteurs
JPS6357764A (ja) * 1986-08-27 1988-03-12 Teijin Ltd マグネトロンスパツタ装置
JPS63161162A (ja) * 1986-12-23 1988-07-04 Toshiba Corp スパツタ−装置
JPH01116070A (ja) * 1987-10-29 1989-05-09 Internatl Business Mach Corp <Ibm> スパツタ装置
JPH0198164U (https=) * 1987-12-17 1989-06-30
JPH04116164A (ja) * 1990-08-31 1992-04-16 Nec Corp 酸化物超電導薄膜製造装置
JPH0684826A (ja) * 1992-02-26 1994-03-25 Internatl Business Mach Corp <Ibm> 基板に埋込み金属を形成する方法
JPH093644A (ja) * 1995-06-23 1997-01-07 Chugai Ro Co Ltd 反応性スパッタリング装置
EP0860514A3 (en) * 1997-02-19 1998-09-30 Canon Kabushiki Kaisha Reactive sputtering apparatus and process for forming thin film using same
EP0860513A3 (en) * 1997-02-19 2000-01-12 Canon Kabushiki Kaisha Thin film forming apparatus and process for forming thin film using same
EP0908531A3 (en) * 1997-10-08 2002-05-15 Canon Kabushiki Kaisha Apparatus and method for forming a thin film of a compound

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3332840B2 (ja) * 1997-02-19 2002-10-07 キヤノン株式会社 反応性スパッタリング装置及びそれを用いた薄膜形成法
JP3332839B2 (ja) * 1997-02-19 2002-10-07 キヤノン株式会社 薄膜形成装置及びそれを用いた薄膜形成法
JP4664061B2 (ja) * 2004-12-22 2011-04-06 株式会社アルバック 成膜装置および成膜方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2551460A1 (fr) * 1983-09-02 1985-03-08 Leybold Heraeus Gmbh & Co Kg Procede et dispositif de depot par pulverisation reactive de composes de metaux et de semi-conducteurs
JPS60155673A (ja) * 1983-09-02 1985-08-15 ライボルト・アクチェンゲゼルシャフト 金属又は半導体の化合物の反応性スパツタリング法及びそのための装置
JPS6357764A (ja) * 1986-08-27 1988-03-12 Teijin Ltd マグネトロンスパツタ装置
JPS63161162A (ja) * 1986-12-23 1988-07-04 Toshiba Corp スパツタ−装置
JPH01116070A (ja) * 1987-10-29 1989-05-09 Internatl Business Mach Corp <Ibm> スパツタ装置
JPH0198164U (https=) * 1987-12-17 1989-06-30
JPH04116164A (ja) * 1990-08-31 1992-04-16 Nec Corp 酸化物超電導薄膜製造装置
JPH0684826A (ja) * 1992-02-26 1994-03-25 Internatl Business Mach Corp <Ibm> 基板に埋込み金属を形成する方法
JPH093644A (ja) * 1995-06-23 1997-01-07 Chugai Ro Co Ltd 反応性スパッタリング装置
EP0860514A3 (en) * 1997-02-19 1998-09-30 Canon Kabushiki Kaisha Reactive sputtering apparatus and process for forming thin film using same
EP0860513A3 (en) * 1997-02-19 2000-01-12 Canon Kabushiki Kaisha Thin film forming apparatus and process for forming thin film using same
US6200431B1 (en) 1997-02-19 2001-03-13 Canon Kabushiki Kaisha Reactive sputtering apparatus and process for forming thin film using same
US6451184B1 (en) 1997-02-19 2002-09-17 Canon Kabushiki Kaisha Thin film forming apparatus and process for forming thin film using same
EP0908531A3 (en) * 1997-10-08 2002-05-15 Canon Kabushiki Kaisha Apparatus and method for forming a thin film of a compound

Also Published As

Publication number Publication date
JPS6127462B2 (https=) 1986-06-25

Similar Documents

Publication Publication Date Title
JPS58110673A (ja) 反応性スパツタリング装置
US6238527B1 (en) Thin film forming apparatus and method of forming thin film of compound by using the same
US11584982B2 (en) Reactive sputter deposition of dielectric films
JPS6341013A (ja) 薄膜形成装置
US6090247A (en) Apparatus for coating substrates
JP3263142B2 (ja) 担体上に施された酸化物コーティングの処理装置
JPS6144180A (ja) 硼燐珪酸ガラスの蒸着法
US4705700A (en) Chemical vapor deposition method for the thin film of semiconductor
JPS60262969A (ja) スパツタタ−ゲツト装置
JP2646664B2 (ja) マイクロ波プラズマ膜推積装置
JPH01188678A (ja) プラズマ気相成長装置
JPH02115359A (ja) 化合物薄膜作成方法および装置
JPS641548B2 (https=)
JPS6197838A (ja) 薄膜形成方法
JP2955074B2 (ja) 立方晶窒化ホウ素膜の製造方法
JPH01275754A (ja) 多層膜形成装置
US6179919B1 (en) Apparatus for performing chemical vapor deposition
JPH03115565A (ja) スパッタリング装置及び膜形成方法
JPH04325671A (ja) スパッタ装置およびスパッタ法
JPH01298151A (ja) 化合物薄膜の形成方法
JPS6057613A (ja) プラズマｃｖｄ装置
JPS5992995A (ja) 高融点金属シリサイド膜の形成方法
JPH02125865A (ja) 化合物薄膜製造装置
JPH02301560A (ja) 誘電体膜製造装置
JP2001040473A (ja) 反応性スパッタリング方法とその装置