JPS6127462B2 - - Google Patents
Info
- Publication number
- JPS6127462B2 JPS6127462B2 JP20689981A JP20689981A JPS6127462B2 JP S6127462 B2 JPS6127462 B2 JP S6127462B2 JP 20689981 A JP20689981 A JP 20689981A JP 20689981 A JP20689981 A JP 20689981A JP S6127462 B2 JPS6127462 B2 JP S6127462B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- chamber
- reactive gas
- reactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 49
- 238000005192 partition Methods 0.000 claims description 28
- 239000011261 inert gas Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000005546 reactive sputtering Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 4
- 239000013076 target substance Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 23
- 239000002245 particle Substances 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20689981A JPS58110673A (ja) | 1981-12-23 | 1981-12-23 | 反応性スパツタリング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20689981A JPS58110673A (ja) | 1981-12-23 | 1981-12-23 | 反応性スパツタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58110673A JPS58110673A (ja) | 1983-07-01 |
| JPS6127462B2 true JPS6127462B2 (https=) | 1986-06-25 |
Family
ID=16530898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20689981A Granted JPS58110673A (ja) | 1981-12-23 | 1981-12-23 | 反応性スパツタリング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58110673A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10298753A (ja) * | 1997-02-19 | 1998-11-10 | Canon Inc | 反応性スパッタリング装置及びそれを用いた薄膜形成法 |
| JPH111771A (ja) * | 1997-02-19 | 1999-01-06 | Canon Inc | 薄膜形成装置及びそれを用いた薄膜形成法 |
| JP2006176822A (ja) * | 2004-12-22 | 2006-07-06 | Ulvac Japan Ltd | 成膜装置および成膜方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
| JPS6357764A (ja) * | 1986-08-27 | 1988-03-12 | Teijin Ltd | マグネトロンスパツタ装置 |
| JPS63161162A (ja) * | 1986-12-23 | 1988-07-04 | Toshiba Corp | スパツタ−装置 |
| US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
| JPH0527490Y2 (https=) * | 1987-12-17 | 1993-07-13 | ||
| JPH04116164A (ja) * | 1990-08-31 | 1992-04-16 | Nec Corp | 酸化物超電導薄膜製造装置 |
| US5262354A (en) * | 1992-02-26 | 1993-11-16 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| JP2905421B2 (ja) * | 1995-06-23 | 1999-06-14 | 中外炉工業株式会社 | 反応性スパッタリング装置 |
| EP0860513A3 (en) * | 1997-02-19 | 2000-01-12 | Canon Kabushiki Kaisha | Thin film forming apparatus and process for forming thin film using same |
| KR100277321B1 (ko) * | 1997-02-19 | 2001-01-15 | 미다라이 후지오 | 반응성스퍼터링장치및이를이용하는박막형성방법 |
| US6238527B1 (en) * | 1997-10-08 | 2001-05-29 | Canon Kabushiki Kaisha | Thin film forming apparatus and method of forming thin film of compound by using the same |
-
1981
- 1981-12-23 JP JP20689981A patent/JPS58110673A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10298753A (ja) * | 1997-02-19 | 1998-11-10 | Canon Inc | 反応性スパッタリング装置及びそれを用いた薄膜形成法 |
| JPH111771A (ja) * | 1997-02-19 | 1999-01-06 | Canon Inc | 薄膜形成装置及びそれを用いた薄膜形成法 |
| JP2006176822A (ja) * | 2004-12-22 | 2006-07-06 | Ulvac Japan Ltd | 成膜装置および成膜方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58110673A (ja) | 1983-07-01 |
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