JPS58100436A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58100436A
JPS58100436A JP19855381A JP19855381A JPS58100436A JP S58100436 A JPS58100436 A JP S58100436A JP 19855381 A JP19855381 A JP 19855381A JP 19855381 A JP19855381 A JP 19855381A JP S58100436 A JPS58100436 A JP S58100436A
Authority
JP
Japan
Prior art keywords
pellet
melting point
face
low melting
point glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19855381A
Other languages
English (en)
Inventor
Eiji Yamamoto
英治 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19855381A priority Critical patent/JPS58100436A/ja
Publication of JPS58100436A publication Critical patent/JPS58100436A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8389—Bonding techniques using an inorganic non metallic glass type adhesive, e.g. solder glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は低融点ガラスを用いて半導体ペレットを搭載す
る半導体装置の製造方法に関するものである。
ガラス封止層の半導体装置では低融点ガラスによる半導
体ベレットの搭載方法が知られている。
この方法は第１図に示すように、パッケージ１のペレッ
ト取“何面ｌａ上に予め低融点ガラス２ｖ加熱して軟化
させた状態で設けておき、この低融点ガラス２の上方か
ら半導体ペレット３を押圧することにより、低融点ガラ
ス２を接着剤としてベレン）３ｖ取付面１ａに溶着する
方法である。
しかしながらこの方法では、低融点ガラス２を軟化状態
にした時にペレッＦ取付面１ａの側壁に低融点ガラス２
が濡れ上りガラス層の表面が凹状になる。このため、こ
のようなガラス上にペレット３を押し付けろと、最初に
ペレットの周辺部がガラスに接触することになり、ペレ
ット３０下側とガラスとの間に空気が閉じ込められてボ
イド（空気層）４ができ晶くなる。このようなボイド４
が存在すると、断熱作用によってペレットの放熱性が低
下したりペレットの溶着強度が低下すゐのみならず熱衝
撃等のストレスな受けたときにボイド４の周辺にペレッ
トを破壊する工つな応力集中が生じたりペレットが剥離
するような問題が生ずる。特に、近年のメモリ等の半導
体ペレットは高集積化と共にペレット寸法も大型化して
おり、このような不＾合は顕著である。
したがって、本発明の目的は低融点ガラスＹプリフォー
ムしてペレットと取付面との間に介在させた上で、ガラ
スＶ加熱溶融することにより、ベレットと取付面との間
にボイドを発生させることはなく、ベレットの搭載強度
の向上や放熱性の向上１連成することができる半導体装
置の製造方法を提供することにある。
以下１図示の実施例により本発明を説明する。
第２図は本発明方法を説明するための半導体装置！示し
ており、１はその上面中央にペレッ）３ａ付面ｌ鳳とし
ての凹部を形成したパッケージベースであり、セラミッ
ク材等にて形成している。また、このベースｌの上面周
辺部には封止ガラス５を用いて外部導出リード６を固着
している。そして、このベース１に半導体ベレット３を
搭載するに際しては、少なくとも上面が平坦になるよう
にプリフォームした常温固型の低融点ガラス２Ａ’ｌ−
取付ｍ１１上に置き、更にその上に半導体ペレット３′
４を載置する。しかる後にベース１ｖ加熱すると低融点
ガラス２人は直ちに溶融し、ベレット３を取付１ｉｊｌ
ｌに溶着する。このとき、ベレット３は若干の力をもっ
て下方に押し付けることが肝要である。
したがって、このようにしてペレット付けを行なえば、
低融点ガラス２人は上面ヲ平坦にプリフォームしている
のでベレット３の下面との密着性は良く、ガラスが溶融
したときにもベレットとの間にボイドが生ずることはな
い。こ３により、ベレット３の放熱効果を高めると共に
溶着強度が向上し、またストレスの集中等の不具合が生
じることもない。
セラミックキャップ８ｖ封止ガラス５ＡＫて取付けてパ
ッケージを構成することはこれまでと同じである。
以上のように本発明によれば、取付面とベレットとの間
にプリフォームした低融点ガラスを介装し、その後これ
を加熱溶融してベレットを取付面に溶着しているので、
両者間に生じ易いボイドの発生を防止し、ベレットの接
着強度や放熱特性の向上な達成することができるという
効果を奏する。
【図面の簡単な説明】
第１図は従来の不具合Ｖ説明する断面図、第２Ｅおよび
第３Ｅは本発明方法ｖｉａ明するための断面図である。 ｌ・・・ベース（パッケージ）、１ａ・・・ベレット取
付面、２．２人・・・低融点ガラス、３・・・ベレット
、４・・・ボイド、５．５Ａ′％・・封止ガラス％６・
・・外部導出リード、７・・・ワイヤ％８・・・セラミ
ックキャップ。 第　　１　　図 第　　２　　図 第　　３　　図

Claims (1)

    【特許請求の範囲】
  1. １、パッケージの半導体ペレット取付面上に半導体ペレ
    ッ）Ｖ低融点ガラスにて取着するに際し、低融点ガラス
    は予めプリフォームとして取付面と半導体ペレットとの
    間に介装し、しかる後低融点ガラスＶ加熱溶融して半導
    体ペレットをパッケージに溶着したことＶ特徴とする半
    導体装置の製造方法。
JP19855381A 1981-12-11 1981-12-11 半導体装置の製造方法 Pending JPS58100436A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19855381A JPS58100436A (ja) 1981-12-11 1981-12-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19855381A JPS58100436A (ja) 1981-12-11 1981-12-11 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPS58100436A true JPS58100436A (ja) 1983-06-15

Family

ID=16393082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19855381A Pending JPS58100436A (ja) 1981-12-11 1981-12-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58100436A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011207655A (ja) * 2010-03-30 2011-10-20 Nippon Electric Glass Co Ltd 接合材料およびそれを用いた部材接合方法
JP2011210911A (ja) * 2010-03-30 2011-10-20 Nippon Electric Glass Co Ltd 半導体発光素子デバイスの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011207655A (ja) * 2010-03-30 2011-10-20 Nippon Electric Glass Co Ltd 接合材料およびそれを用いた部材接合方法
JP2011210911A (ja) * 2010-03-30 2011-10-20 Nippon Electric Glass Co Ltd 半導体発光素子デバイスの製造方法

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