JPS6049641A - ワイヤボンド装置 - Google Patents

ワイヤボンド装置

Info

Publication number
JPS6049641A
JPS6049641A JP58159188A JP15918883A JPS6049641A JP S6049641 A JPS6049641 A JP S6049641A JP 58159188 A JP58159188 A JP 58159188A JP 15918883 A JP15918883 A JP 15918883A JP S6049641 A JPS6049641 A JP S6049641A
Authority
JP
Japan
Prior art keywords
semiconductor element
solder
capillary
wire
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58159188A
Other languages
English (en)
Other versions
JPH0216011B2 (ja
Inventor
Tetsuji Yamaguchi
哲司 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58159188A priority Critical patent/JPS6049641A/ja
Publication of JPS6049641A publication Critical patent/JPS6049641A/ja
Publication of JPH0216011B2 publication Critical patent/JPH0216011B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H—ELECTRICITY
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/01—Chemical elements
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    • H01L2924/014—Solder alloys

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、半導体素子の電極と、半導体装置の外部導
出リードとをＡｕ等の金属細線にて接続するワイヤボン
ド装置に関するものである。
〔従来技術〕
第１図（ａ）、（ｂ）はワイヤボンド装置の簡略図であ
る。金属細線、例えばＡｕ線２はあらかじめ金属細線接
続用工具（以下キャピラリと称す）３に通されており、
Ａｕ線２の先端は球状に形成されている。この状態で、
キャピラリ３は外部導出リードの１つ４ｂに載置されて
いる半導体素子１の電極上に下降し、電極ＫＡｕ線２を
押圧することにより、半導体素子１の電極とＡｕ線２と
が接続される（第１図（ａ））。その後、キャピラリ３
は所定の位置まで上昇し、所定の高さを保持したまま半
導体素子１が載置されていない他の外部導出リード、例
えば外部導出リード４ｃ上に平行移動し、その後キャピ
ラリ３は下降し外部導出リード４ＣＫＡＬＩ線２を押圧
することにより接続が完了し、半導体素子１の電極と外
部導出リード４ｃとはＡｕ線２を介して接続される（第
１図（ｂ））。
さて、最近半導体装置のコストを低減する方法として、
半導体素子１を縮小することがなされており、これに伴
い半導体素子１の電極面積も縮小される傾向にある。こ
こで、半導体素子１を外部導出リード４ｂに固着すると
き特に外部導出リ一ド４ｂと半導体素子１の熱膨張の差
のために生ずる応力により半導体素子１が割れることを
防ぐため、はんだ等の比較的低融点のソルダを介して半
　゛導体素子１と外部導出リード４ｂを固着している半
導体装置においては、外部導出リード４ｂを上記ソルダ
の融点以下の温度に加熱保持した状態でワイヤボンドを
行う時、この温度では低すぎ満足な接続が得られないた
め、通常良好なワイヤボンドを実現するために半導体素
子１の電極とＡｕ線２を接続する際超音波を発振させ、
この超音波エネルギーにより不足する熱エネルギーを補
ってワイヤボンドを実施している。
この時問題になるのが、超音波によるワイヤボンドの場
合、熱圧着の時と比べるとＡｕ線２がつぶれ過ぎ半導体
素子１の電極同士がＡｕ線２により短絡するという不都
合が生じることであり、ましてや半導体素子１の縮小化
に伴う電極面積の縮小においては上記短絡現象が増加す
るという欠点があった。
逆に熱圧着によりワイヤボンドを実施する場合、良好な
ワイヤボンドを得るためリードフレームをソルダの融点
以上に加熱しなければならず、この時は上記Ａｌｌ線２
がつぶれ過ぎることによる電極間の短絡現象は回避でき
るが、第２図に示すように、この場合、半導体素子１の
電極とＡｕ線２の接続が完了した後、キャピラリ３が上
昇する際ソルダ５が溶融しているため、半導体素子１が
一緒に持ち上がるという不都合が生じていた。
〔発明の概要〕
この発明は、上記欠点を解消するためになされたもので
、キャピラリが上方へ移動する直前にソルダな冷却する
ための冷却ガスを噴出するノズルを設けたものである。
〔発明の実施例〕
第３図はこの発明の一実施例を示すものであり、半導体
素子１が取り付げである外部導出リード４ｂはソルダ５
の融点以上に加熱しである。この状態でキャピラリ３に
より半導体素子１の電極とＡｕ線２とを熱圧着により接
続後、キャピラリ３が上方に移動する直前に半導体素子
１の側面に設けられたノズル６によりエアー等の冷却ガ
スを溶融しているソルダ５に吹き付はソルダ５を凝固さ
せた状態にしてからキャピラリ３を上昇させることによ
り半導体素子１は上方に持ち上がることがなく、良好な
ワイヤボンドを得ることができる。
〔発明の効果〕
以上述べたようにこの発明は、半導体素子の電極とＡｕ
線を熱圧着により良好に接続せしめた後溶融ソルダにノ
ズルから冷却ガスを吹き付けることにより凝固させた状
態でキャピラリを上方へ移動させることができるので、
低融点ソルダを使用する場合でも熱圧着のみで良好なワ
イヤボンドが実現でき、半導体素子の縮小化に多大な効
果がある。
【図面の簡単な説明】
第１図（ａ）　、　、　（ｂ）は従来のワイヤボンド装
置の説明図、第２図は従来のワイヤポンド装置の欠点を
説明するための図、第３図はこの発明の一実施例を示す
図である。 図中、１は半導体素子、２はＡｕ線、３はキャピラリ、
４３〜４Ｃは外部導出リード、５はソルダ、６はノズル
である。 なお、図中の同一符号は同一または相当部分を示す。 代理人　大岩増雄　（外２名） 第１図 第２図 第３図

Claims (1)

    【特許請求の範囲】
  1. 半導体素子の電極と、この半導体素子がソルダにより固
    着されている外部導出リード以外の外部導出リードとを
    金属細線接続工具を用い金属細線にて接続するワイヤボ
    ンド装置において、前記金属細線と半導体素子の電極と
    の接続が完了し、前記金属細線接続工具が上方へ移動す
    る直前に前記ソルダに側面より冷却ガスを吐出し前記ソ
    ルダを凝固せしめるノズルを設けたことを特徴とするワ
    イヤボンド装置。
JP58159188A 1983-08-29 1983-08-29 ワイヤボンド装置 Granted JPS6049641A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58159188A JPS6049641A (ja) 1983-08-29 1983-08-29 ワイヤボンド装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58159188A JPS6049641A (ja) 1983-08-29 1983-08-29 ワイヤボンド装置

Publications (2)

Publication Number Publication Date
JPS6049641A true JPS6049641A (ja) 1985-03-18
JPH0216011B2 JPH0216011B2 (ja) 1990-04-13

Family

ID=15688232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58159188A Granted JPS6049641A (ja) 1983-08-29 1983-08-29 ワイヤボンド装置

Country Status (1)

Country Link
JP (1) JPS6049641A (ja)

Also Published As

Publication number Publication date
JPH0216011B2 (ja) 1990-04-13

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