JPH0216011B2 - - Google Patents

Info

Publication number
JPH0216011B2
JPH0216011B2 JP58159188A JP15918883A JPH0216011B2 JP H0216011 B2 JPH0216011 B2 JP H0216011B2 JP 58159188 A JP58159188 A JP 58159188A JP 15918883 A JP15918883 A JP 15918883A JP H0216011 B2 JPH0216011 B2 JP H0216011B2
Authority
JP
Japan
Prior art keywords
semiconductor element
wire
solder
electrode
metal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58159188A
Other languages
English (en)
Other versions
JPS6049641A (ja
Inventor
Tetsuji Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58159188A priority Critical patent/JPS6049641A/ja
Publication of JPS6049641A publication Critical patent/JPS6049641A/ja
Publication of JPH0216011B2 publication Critical patent/JPH0216011B2/ja
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、半導体素子の電極と、半導体装置
の外部導出リードとをAu等の金属細線にて接続
するワイヤボンド装置に関するものである。
〔従来技術〕
第１図ａ，ｂはワイヤボンド装置の簡略図であ
る。金属細線、例えばAu線２はあらかじめ金属
細線接続用工具（以下キヤピラリと称す）３に通
されており、Au線２の先端は球状に形成されて
いる。この状態で、キヤピラリ３は外部導出リー
ドの１つ４ｂに載置されている半導体素子１の電
極上に下降し、電極にAu線２を押圧することに
より、半導体素子１の電極とAu線２とが接続さ
れる（第１図ａ）。その後、キヤピラリ３は所定
の位置まで上昇し、所定の高さを保持したまま半
導体素子１が載置されていない他の外部導出リー
ド、例えば外部導出リード４ｃ上に平行移動し、
その後キヤピラリ３は下降し外部導出リード４ｃ
にAu線２を押圧することにより接続が完了し、
半導体素子１の電極と外部導出リード４ｃとは
Au線２を介して接続される（第１図ｂ）。
さて、最近半導体装置のコストを低減する方法
として、半導体素子１を縮小することがなされて
おり、これに伴い半導体素子１の電極面積も縮小
される傾向にある。ここで、半導体素子１を外部
導出リード４ｂに固着するとき特に外部導出リー
ド４ｂと半導体素子１の熱膨脹の差のために生ず
る応力により半導体素子１が割れることを防ぐた
め、はんだ等の比較的低融点のソルダを介して半
導体素子１と外部導出リード４ｂを固着している
半導体装置においては、外部導出リード４ｂを上
記ソルダの融点以下の温度に加熱保持した状態で
ワイヤボンドを行う時、この温度では低すぎ満足
な接続が得られないため、通常良好なワイヤボン
ドを実現するために半導体素子１の電極とAu線
２を接続する際超音波を発振させ、この超音波エ
ネルギーにより不足する熱エネルギーを補つてワ
イヤボンドを実施している。
この時問題になるのが、超音波によるワイヤボ
ンドの場合、熱圧着の時と比べるとAu線２がつ
ぶれ過ぎ半導体素子１の電極同士がAu線２によ
り短縮するという不都合が生じることであり、ま
してや半導体素子１の縮小比に伴う電極面積の縮
小においては上記短絡現象が増加するという欠点
があつた。
逆に熱圧着によりワイヤボンドを実施する場
合、良好なワイヤボンドを得るためリードフレー
ムをソルダの融点以上に加熱しなければならず、
この時は上記Au線２がつぶれ過ぎることによる
電極間の短絡現象は回避できるが、第２図に示す
ように、この場合、半導体素子１の電極とAu線
２の接続が完了した後、キヤピラリ３が上昇する
際ソルダ５が溶融しているため、半導体素子１が
一緒に持ち上がるという不都合が生じていた。
〔発明の概要〕
この発明は、上記欠点を解消するためになされ
たもので、キヤピラリが上方へ移動する直前にソ
ルダを冷却するための冷却ガスを噴出するノズル
を設けたものである。
〔発明の実施例〕
第３図はこの発明の一実施例を示すものであ
り、半導体素子１が取り付けてある外部導出リー
ド４ｂはソルダ５の融点以上に加熱してある。こ
の状態でキヤピラリ３により半導体素子１の電極
とAu線２とを熱圧着により接続後、キヤピラリ
３が上方に移動する直前に半導体素子１の側面に
設けられたノズル６によりエアー等の冷却ガスを
溶融しているソルダ５に吹き付けソルダ５を凝固
させた状態にしてからキヤピラリ３を上昇させる
ことにより半導体素子１は上方に持ち上がること
がなく、良好なワイヤボンドを得ることができ
る。
〔発明の効果〕
以上述べたようにこの発明は、半導体素子の電
極とAu線を熱圧着により良好に接続せしめた後
溶融ソルダにノズルから冷却ガスを吹き付けるこ
とにより凝固させた状態でキヤピラリを上方へ移
動させることができるので、低融点ソルダを使用
する場合でも熱圧着のみで良好なワイヤボンドが
実現でき、半導体素子の縮小化に多大な効果があ
る。
【図面の簡単な説明】
第１図ａ，ｂは従来のワイヤボンド装置の説明
図、第２図は従来のワイヤボンド装置の欠点を説
明するための図、第３図はこの発明の一実施例を
示す図である。 図中、１は半導体素子、２はAu線、３はキヤ
ピラリ、４ａ〜４ｃは外部導出リード、５はソル
ダ、６はノズルである。なお、図中の同一符号は
同一または相当部分を示す。

Claims (1)

    【特許請求の範囲】
  1. １ 半導体素子の電極と、この半導体素子がソル
    ダにより固着されている外部導出リード以外の外
    部導出リードとを金属細線接続工具を用い金属細
    線にて接続するワイヤボンド装置において、前記
    金属細線と半導体素子の電極との接続が完了し、
    前記金属細線接続工具が上方へ移動する直前に前
    記ソルダに側面より冷却ガスを吐出し前記ソルダ
    を凝固せしめるノズルを設けたことを特徴とする
    ワイヤボンド装置。
JP58159188A 1983-08-29 1983-08-29 ワイヤボンド装置 Granted JPS6049641A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58159188A JPS6049641A (ja) 1983-08-29 1983-08-29 ワイヤボンド装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58159188A JPS6049641A (ja) 1983-08-29 1983-08-29 ワイヤボンド装置

Publications (2)

Publication Number Publication Date
JPS6049641A JPS6049641A (ja) 1985-03-18
JPH0216011B2 true JPH0216011B2 (ja) 1990-04-13

Family

ID=15688232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58159188A Granted JPS6049641A (ja) 1983-08-29 1983-08-29 ワイヤボンド装置

Country Status (1)

Country Link
JP (1) JPS6049641A (ja)

Also Published As

Publication number Publication date
JPS6049641A (ja) 1985-03-18

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