JPS5780759A - Complementary connection insulated gate type field effect transistor integrated circuit - Google Patents
Complementary connection insulated gate type field effect transistor integrated circuitInfo
- Publication number
- JPS5780759A JPS5780759A JP55157191A JP15719180A JPS5780759A JP S5780759 A JPS5780759 A JP S5780759A JP 55157191 A JP55157191 A JP 55157191A JP 15719180 A JP15719180 A JP 15719180A JP S5780759 A JPS5780759 A JP S5780759A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- drain
- integrated circuit
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55157191A JPS5780759A (en) | 1980-11-07 | 1980-11-07 | Complementary connection insulated gate type field effect transistor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55157191A JPS5780759A (en) | 1980-11-07 | 1980-11-07 | Complementary connection insulated gate type field effect transistor integrated circuit |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1273075A Division JPH02197166A (ja) | 1989-10-20 | 1989-10-20 | 高耐圧mos型半導体装置 |
JP3002271A Division JPH05275636A (ja) | 1991-01-11 | 1991-01-11 | 相補接続絶縁ゲート型電界効果トランジスタ集積回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5780759A true JPS5780759A (en) | 1982-05-20 |
Family
ID=15644186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55157191A Pending JPS5780759A (en) | 1980-11-07 | 1980-11-07 | Complementary connection insulated gate type field effect transistor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5780759A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138745A (ja) * | 1987-11-25 | 1989-05-31 | Nec Corp | 半導体装置の製造方法 |
-
1980
- 1980-11-07 JP JP55157191A patent/JPS5780759A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138745A (ja) * | 1987-11-25 | 1989-05-31 | Nec Corp | 半導体装置の製造方法 |
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