JPS5775460A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5775460A
JPS5775460A JP15098680A JP15098680A JPS5775460A JP S5775460 A JPS5775460 A JP S5775460A JP 15098680 A JP15098680 A JP 15098680A JP 15098680 A JP15098680 A JP 15098680A JP S5775460 A JPS5775460 A JP S5775460A
Authority
JP
Japan
Prior art keywords
film
stepped part
thereafter
substrate
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15098680A
Other languages
English (en)
Other versions
JPS6160589B2 (ja
Inventor
Akira Kurosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15098680A priority Critical patent/JPS5775460A/ja
Publication of JPS5775460A publication Critical patent/JPS5775460A/ja
Publication of JPS6160589B2 publication Critical patent/JPS6160589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP15098680A 1980-10-28 1980-10-28 Manufacture of semiconductor device Granted JPS5775460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15098680A JPS5775460A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15098680A JPS5775460A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5775460A true JPS5775460A (en) 1982-05-12
JPS6160589B2 JPS6160589B2 (ja) 1986-12-22

Family

ID=15508780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15098680A Granted JPS5775460A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5775460A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197773A (ja) * 1982-05-13 1983-11-17 Seiko Epson Corp Ｍｏｓ型半導体装置
JPS6094778A (ja) * 1983-10-28 1985-05-27 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタおよびその製造方法
JPH06216148A (ja) * 1991-03-13 1994-08-05 Gold Star Electron Co Ltd 電界効果トランジスタおよびその製造方法
KR100221627B1 (ko) * 1996-07-29 1999-09-15 구본준 반도체장치 및 그의 제조방법
KR100642905B1 (ko) * 2002-07-03 2006-11-03 매그나칩 반도체 유한회사 Ｍｏｓ 트랜지스터 형성 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197773A (ja) * 1982-05-13 1983-11-17 Seiko Epson Corp Ｍｏｓ型半導体装置
JPS6094778A (ja) * 1983-10-28 1985-05-27 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタおよびその製造方法
JPH06216148A (ja) * 1991-03-13 1994-08-05 Gold Star Electron Co Ltd 電界効果トランジスタおよびその製造方法
JP2690069B2 (ja) * 1991-03-13 1997-12-10 エルジイ・セミコン・カンパニイ・リミテッド 電界効果トランジスタの製造方法
KR100221627B1 (ko) * 1996-07-29 1999-09-15 구본준 반도체장치 및 그의 제조방법
KR100642905B1 (ko) * 2002-07-03 2006-11-03 매그나칩 반도체 유한회사 Ｍｏｓ 트랜지스터 형성 방법

Also Published As

Publication number Publication date
JPS6160589B2 (ja) 1986-12-22

Similar Documents

Publication Publication Date Title
JPS5688354A (en) Semiconductor integrated circuit device
JPS5775463A (en) Manufacture of semiconductor device
JPS5775460A (en) Manufacture of semiconductor device
JPS56124270A (en) Manufacture of semiconductor device
JPS54161282A (en) Manufacture of mos semiconductor device
JPS55157241A (en) Manufacture of semiconductor device
IT1140878B (it) Metodo di fabricazione di un transistore ad effetto di campo, a porta isolata e transistore fabbricato con l&#39;ausilio di tale metodo
JPS5764965A (en) Semiconductor device
JPS5483778A (en) Mos semiconductor device and its manufacture
JPS5456357A (en) Production of semiconductor device
JPS5753981A (ja) Handotaisochinoseizohoho
JPS57100768A (en) Manufacture of field effect semiconductor device
JPS54124687A (en) Production of semiconductor device
JPS5736863A (ja) Handotaisochinoseizohoho
JPS5670669A (en) Longitudinal semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS57193062A (en) Manufacture of semiconductor device
JPS56165360A (en) Manufacture of semiconductor device
JPS6468965A (en) Manufacture of semiconductor device
JPS57184248A (en) Manufacture of semiconductor device
JPS5693358A (en) Manufacture of resistor
JPS56162878A (en) Insulated gate type field effect semiconductor device
JPS55165679A (en) Preparation of semiconductor device
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS56146281A (en) Manufacture of semiconductor integrated circuit