JPS577167A - Mis photoelectric converter and manufacture therefor - Google Patents

Mis photoelectric converter and manufacture therefor

Info

Publication number
JPS577167A
JPS577167A JP8069780A JP8069780A JPS577167A JP S577167 A JPS577167 A JP S577167A JP 8069780 A JP8069780 A JP 8069780A JP 8069780 A JP8069780 A JP 8069780A JP S577167 A JPS577167 A JP S577167A
Authority
JP
Japan
Prior art keywords
grooves
film
si3n4
photoelectric converter
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8069780A
Other languages
English (en)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8069780A priority Critical patent/JPS577167A/ja
Publication of JPS577167A publication Critical patent/JPS577167A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/12Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP8069780A 1980-06-14 1980-06-14 Mis photoelectric converter and manufacture therefor Pending JPS577167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8069780A JPS577167A (en) 1980-06-14 1980-06-14 Mis photoelectric converter and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8069780A JPS577167A (en) 1980-06-14 1980-06-14 Mis photoelectric converter and manufacture therefor

Publications (1)

Publication Number Publication Date
JPS577167A true JPS577167A (en) 1982-01-14

Family

ID=13725513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8069780A Pending JPS577167A (en) 1980-06-14 1980-06-14 Mis photoelectric converter and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS577167A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4695860A (en) * 1982-09-21 1987-09-22 Thomson-Csf Gate structure for an integrated circuit comprising elements of the gate-insulator-semiconductor type and a method of fabrication of an integrated circuit using said structure
JPH02143569A (ja) * 1988-11-25 1990-06-01 Agency Of Ind Science & Technol 光電変換素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4695860A (en) * 1982-09-21 1987-09-22 Thomson-Csf Gate structure for an integrated circuit comprising elements of the gate-insulator-semiconductor type and a method of fabrication of an integrated circuit using said structure
JPH02143569A (ja) * 1988-11-25 1990-06-01 Agency Of Ind Science & Technol 光電変換素子

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