JPS5764967A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5764967A JPS5764967A JP55141318A JP14131880A JPS5764967A JP S5764967 A JPS5764967 A JP S5764967A JP 55141318 A JP55141318 A JP 55141318A JP 14131880 A JP14131880 A JP 14131880A JP S5764967 A JPS5764967 A JP S5764967A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- region
- type
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141318A JPS5764967A (en) | 1980-10-08 | 1980-10-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141318A JPS5764967A (en) | 1980-10-08 | 1980-10-08 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58125720A Division JPS5925266A (ja) | 1983-07-11 | 1983-07-11 | 半導体装置作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5764967A true JPS5764967A (en) | 1982-04-20 |
| JPH0234171B2 JPH0234171B2 (enrdf_load_stackoverflow) | 1990-08-01 |
Family
ID=15289116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55141318A Granted JPS5764967A (en) | 1980-10-08 | 1980-10-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5764967A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131484A (ja) * | 1984-11-29 | 1986-06-19 | Res Dev Corp Of Japan | 半導体不揮発性メモリ |
-
1980
- 1980-10-08 JP JP55141318A patent/JPS5764967A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131484A (ja) * | 1984-11-29 | 1986-06-19 | Res Dev Corp Of Japan | 半導体不揮発性メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0234171B2 (enrdf_load_stackoverflow) | 1990-08-01 |
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