JPS5764965A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5764965A
JPS5764965A JP55141316A JP14131680A JPS5764965A JP S5764965 A JPS5764965 A JP S5764965A JP 55141316 A JP55141316 A JP 55141316A JP 14131680 A JP14131680 A JP 14131680A JP S5764965 A JPS5764965 A JP S5764965A
Authority
JP
Japan
Prior art keywords
layer
selectively
film
fet
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55141316A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237106B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP55141316A priority Critical patent/JPS5764965A/ja
Publication of JPS5764965A publication Critical patent/JPS5764965A/ja
Priority to JP2064881A priority patent/JPH03136275A/ja
Publication of JPH0237106B2 publication Critical patent/JPH0237106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP55141316A 1980-10-08 1980-10-08 Semiconductor device Granted JPS5764965A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55141316A JPS5764965A (en) 1980-10-08 1980-10-08 Semiconductor device
JP2064881A JPH03136275A (ja) 1980-10-08 1990-03-15 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141316A JPS5764965A (en) 1980-10-08 1980-10-08 Semiconductor device

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP58125719A Division JPS5925274A (ja) 1983-07-11 1983-07-11 半導体装置作製方法
JP2064883A Division JPH02290062A (ja) 1990-03-15 1990-03-15 半導体装置
JP2064882A Division JPH02290061A (ja) 1990-03-15 1990-03-15 半導体装置の作製方法
JP2064881A Division JPH03136275A (ja) 1980-10-08 1990-03-15 半導体装置

Publications (2)

Publication Number Publication Date
JPS5764965A true JPS5764965A (en) 1982-04-20
JPH0237106B2 JPH0237106B2 (enrdf_load_stackoverflow) 1990-08-22

Family

ID=15289066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141316A Granted JPS5764965A (en) 1980-10-08 1980-10-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5764965A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925274A (ja) * 1983-07-11 1984-02-09 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS5925266A (ja) * 1983-07-11 1984-02-09 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61194875A (ja) * 1985-02-25 1986-08-29 Toshiba Corp 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法
JPH02290062A (ja) * 1990-03-15 1990-11-29 Semiconductor Energy Lab Co Ltd 半導体装置
JPH02290061A (ja) * 1990-03-15 1990-11-29 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925274A (ja) * 1983-07-11 1984-02-09 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS5925266A (ja) * 1983-07-11 1984-02-09 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61194875A (ja) * 1985-02-25 1986-08-29 Toshiba Corp 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法
JPH02290062A (ja) * 1990-03-15 1990-11-29 Semiconductor Energy Lab Co Ltd 半導体装置
JPH02290061A (ja) * 1990-03-15 1990-11-29 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Also Published As

Publication number Publication date
JPH0237106B2 (enrdf_load_stackoverflow) 1990-08-22

Similar Documents

Publication Publication Date Title
KR0128826B1 (ko) 디램셀 제조방법
JPS5623771A (en) Semiconductor memory
JPS6446981A (en) Semiconductor device
US4538166A (en) Semiconductor memory device
JPS56125868A (en) Thin-film semiconductor device
EP0028654B1 (en) Semiconductive memory device and fabricating method therefor
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS57109367A (en) Semiconductor memory device
JPS5764965A (en) Semiconductor device
US4323910A (en) MNOS Memory transistor
JPS55132072A (en) Mos semiconductor device
JPS5687368A (en) Semiconductor device
JPS5587481A (en) Mis type semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS5575238A (en) Method of fabricating semiconductor device
JPS5764966A (en) Semiconductor device
JPS5764967A (en) Semiconductor device
JPS5783059A (en) Manufacture of mos type semiconductor device
JPS55121680A (en) Manufacture of semiconductor device
KR950021134A (ko) 반도체소자의 콘택 형성방법
JPS54143076A (en) Semiconductor device and its manufacture
JPS55102274A (en) Insulated gate field effect transistor
JPS57202783A (en) Manufacture of insulated gate type field-effect transistor
JPS5721865A (en) Manufacture of semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device