JPS575361A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS575361A JPS575361A JP7877680A JP7877680A JPS575361A JP S575361 A JPS575361 A JP S575361A JP 7877680 A JP7877680 A JP 7877680A JP 7877680 A JP7877680 A JP 7877680A JP S575361 A JPS575361 A JP S575361A
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- charge
- wells
- substrate
- stages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001133 acceleration Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To improve the operating speed of a charge transfer device and to enhance the transfer efficiency of the device by forming the depth of potential well induced under transfer of the CCD in three stages and sequentially deepening the depth of the well in the transfer direction. CONSTITUTION:An SiO2 film 11 and transfer electrodes 12-16 are formed on the surface of a P type silicon substrate 10. P<+> type semiconductor regions 17-21 are formed on the surface of the substrate directly under the electrode, and N<+> type semiconductor regions 22-26 are further formed. When clock pulses phi1, phi2 are supplied to the respective electrodes, the potential wells of three stages having different depths are inducted under the electrode, and the depths of the wells are sequentially deepened toward the charge trasfer direction. The acceleration caused by the fringe field effect caused by the signal charge is increased, and even if the operation speed is accelerated, high transfer efficiency can be obtained. The potential wells can also be formed by providing P<++>-P<+>-P region in the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7877680A JPS575361A (en) | 1980-06-11 | 1980-06-11 | Charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7877680A JPS575361A (en) | 1980-06-11 | 1980-06-11 | Charge transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS575361A true JPS575361A (en) | 1982-01-12 |
| JPS618592B2 JPS618592B2 (en) | 1986-03-15 |
Family
ID=13671298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7877680A Granted JPS575361A (en) | 1980-06-11 | 1980-06-11 | Charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS575361A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58180409U (en) * | 1982-05-28 | 1983-12-02 | ソニ−マグネスケ−ル株式会社 | Measuring device |
| JPS6149472A (en) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | Charge transfer device |
| JPS6167963A (en) * | 1984-09-11 | 1986-04-08 | Sanyo Electric Co Ltd | Charge coupling element |
| JPS61184876A (en) * | 1985-02-12 | 1986-08-18 | Matsushita Electronics Corp | Charge transfer device |
| US5289022A (en) * | 1991-05-14 | 1994-02-22 | Sony Corporation | CCD shift register having a plurality of storage regions and transfer regions therein |
| US7420603B2 (en) | 2004-01-30 | 2008-09-02 | Sony Corporation | Solid-state image pickup device and module type solid-state image pickup device |
| US8925404B2 (en) | 2009-12-30 | 2015-01-06 | Robert Bosch Gmbh | Starting device for an internal combustion engine |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01122497U (en) * | 1988-02-05 | 1989-08-21 |
-
1980
- 1980-06-11 JP JP7877680A patent/JPS575361A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58180409U (en) * | 1982-05-28 | 1983-12-02 | ソニ−マグネスケ−ル株式会社 | Measuring device |
| JPS6149472A (en) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | Charge transfer device |
| JPH0682693B2 (en) * | 1984-08-17 | 1994-10-19 | 松下電子工業株式会社 | Charge transfer device |
| JPS6167963A (en) * | 1984-09-11 | 1986-04-08 | Sanyo Electric Co Ltd | Charge coupling element |
| JPS61184876A (en) * | 1985-02-12 | 1986-08-18 | Matsushita Electronics Corp | Charge transfer device |
| US5289022A (en) * | 1991-05-14 | 1994-02-22 | Sony Corporation | CCD shift register having a plurality of storage regions and transfer regions therein |
| US7420603B2 (en) | 2004-01-30 | 2008-09-02 | Sony Corporation | Solid-state image pickup device and module type solid-state image pickup device |
| US8925404B2 (en) | 2009-12-30 | 2015-01-06 | Robert Bosch Gmbh | Starting device for an internal combustion engine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS618592B2 (en) | 1986-03-15 |
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