JPS5754330A - Formation of silicon oxidized film - Google Patents

Formation of silicon oxidized film

Info

Publication number
JPS5754330A
JPS5754330A JP55130936A JP13093680A JPS5754330A JP S5754330 A JPS5754330 A JP S5754330A JP 55130936 A JP55130936 A JP 55130936A JP 13093680 A JP13093680 A JP 13093680A JP S5754330 A JPS5754330 A JP S5754330A
Authority
JP
Japan
Prior art keywords
film
electrode wiring
cvd
sio2
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55130936A
Other languages
Japanese (ja)
Other versions
JPS6230691B2 (en
Inventor
Seiji Onaka
Kosei Kajiwara
Hiroshi Komeno
Kazutoshi Nagano
Kosuke Yasuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55130936A priority Critical patent/JPS5754330A/en
Publication of JPS5754330A publication Critical patent/JPS5754330A/en
Publication of JPS6230691B2 publication Critical patent/JPS6230691B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To reduce electrode wiring capacitance by forming a CVD-SiO2 film on a polycrystalline thin Si film formed on the surface of a foundation SiO2 film and thereby enabling the formation of a thick CVD-SiO2 film and the confirmation of the point of completion of etching of this film by the polycrystalline Si. CONSTITUTION:When the polycrystalline thin Si film 13 is formed on the foundation SiO2 film 12 on the surface of an Si substrate 11, the thick CVD-SiO2 film 14 can be formed thereon. Next, a region to be an electrode wiring part being masked, the CVD-SiO2 film 14 is etched down to the surface of the polycrystalline thin Si film 13. The point of completion of this etching is confirmed by the repellency shown by the polycrystalline thin Si film 13. An Al electrode wiring 15 is formed on the film 14. By this constitution, low-capacitance electrode wiring can be composed and thereby IC of high speed and high performance can be obtained.
JP55130936A 1980-09-19 1980-09-19 Formation of silicon oxidized film Granted JPS5754330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130936A JPS5754330A (en) 1980-09-19 1980-09-19 Formation of silicon oxidized film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130936A JPS5754330A (en) 1980-09-19 1980-09-19 Formation of silicon oxidized film

Publications (2)

Publication Number Publication Date
JPS5754330A true JPS5754330A (en) 1982-03-31
JPS6230691B2 JPS6230691B2 (en) 1987-07-03

Family

ID=15046152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130936A Granted JPS5754330A (en) 1980-09-19 1980-09-19 Formation of silicon oxidized film

Country Status (1)

Country Link
JP (1) JPS5754330A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502866A (en) * 1973-05-10 1975-01-13
JPS5013156A (en) * 1973-06-06 1975-02-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502866A (en) * 1973-05-10 1975-01-13
JPS5013156A (en) * 1973-06-06 1975-02-12

Also Published As

Publication number Publication date
JPS6230691B2 (en) 1987-07-03

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