GB1364951A - Twophase charge coupled device - Google Patents

Twophase charge coupled device

Info

Publication number
GB1364951A
GB1364951A GB3843472A GB3843472A GB1364951A GB 1364951 A GB1364951 A GB 1364951A GB 3843472 A GB3843472 A GB 3843472A GB 3843472 A GB3843472 A GB 3843472A GB 1364951 A GB1364951 A GB 1364951A
Authority
GB
United Kingdom
Prior art keywords
areas
charge
aug
coupled device
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3843472A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1364951A publication Critical patent/GB1364951A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Abstract

1364951 Charge-coupled devices SONY CORP 17 Aug 1972 [19 Aug 1971] 38434/72 Heading H1K A two phase charge coupled device Fig. 3, comprises two interdigitated sets of field electrodes, e.g. of aluminium, each electrode of each set overlying two adjacent areas 11L, 11R of different crystallographic orientation so as to provide an assymmetrical potential well thereunder to ensure unidirectional transfer of the pocket of minority carriers from a diffused P- type carrier injection zone 76 to a similar diffused collector zone 77. The differently orientated areas may be produced by forming rectangular apertures with edges aligned in <110> directions in an oxide coating on a 100 oriented surface of an N-type silicon body, etching the surface anisotropically in potassium hydroxide or an amine-pyrocatechol-water mixture to form V-shaped grooves with [111] oriented sides and removing the masking. The areas of the body on each side of the charge transfer channel are continuously grooved to act as channel stoppers. Other suitable pairs of orientations are [111] and [110], and [110] and [100].
GB3843472A 1971-08-19 1972-08-17 Twophase charge coupled device Expired GB1364951A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46063165A JPS5132457B2 (en) 1971-08-19 1971-08-19

Publications (1)

Publication Number Publication Date
GB1364951A true GB1364951A (en) 1974-08-29

Family

ID=13221343

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3843472A Expired GB1364951A (en) 1971-08-19 1972-08-17 Twophase charge coupled device

Country Status (5)

Country Link
JP (1) JPS5132457B2 (en)
CA (1) CA973972A (en)
DE (1) DE2240790A1 (en)
GB (1) GB1364951A (en)
NL (1) NL7211422A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119038A (en) * 1974-08-08 1976-02-16 Toyota Motor Co Ltd Denchakutosodeno kawakimuraboshihoho
JPS5332684A (en) * 1976-09-07 1978-03-28 Toshiba Corp Semiconductor memory device
US4234887A (en) * 1979-05-24 1980-11-18 International Business Machines Corporation V-Groove charge-coupled device

Also Published As

Publication number Publication date
NL7211422A (en) 1973-02-21
DE2240790A1 (en) 1973-03-01
CA973972A (en) 1975-09-02
JPS4829378A (en) 1973-04-18
JPS5132457B2 (en) 1976-09-13

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee