JPS5749225A - Single-crystallizing method for non-single crystalline semiconductor layer - Google Patents

Single-crystallizing method for non-single crystalline semiconductor layer

Info

Publication number
JPS5749225A
JPS5749225A JP12482380A JP12482380A JPS5749225A JP S5749225 A JPS5749225 A JP S5749225A JP 12482380 A JP12482380 A JP 12482380A JP 12482380 A JP12482380 A JP 12482380A JP S5749225 A JPS5749225 A JP S5749225A
Authority
JP
Japan
Prior art keywords
layer
energy beam
scan
crystallize
starting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12482380A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142127B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12482380A priority Critical patent/JPS5749225A/ja
Publication of JPS5749225A publication Critical patent/JPS5749225A/ja
Publication of JPH0142127B2 publication Critical patent/JPH0142127B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP12482380A 1980-09-09 1980-09-09 Single-crystallizing method for non-single crystalline semiconductor layer Granted JPS5749225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12482380A JPS5749225A (en) 1980-09-09 1980-09-09 Single-crystallizing method for non-single crystalline semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12482380A JPS5749225A (en) 1980-09-09 1980-09-09 Single-crystallizing method for non-single crystalline semiconductor layer

Publications (2)

Publication Number Publication Date
JPS5749225A true JPS5749225A (en) 1982-03-23
JPH0142127B2 JPH0142127B2 (enrdf_load_stackoverflow) 1989-09-11

Family

ID=14894982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12482380A Granted JPS5749225A (en) 1980-09-09 1980-09-09 Single-crystallizing method for non-single crystalline semiconductor layer

Country Status (1)

Country Link
JP (1) JPS5749225A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194423A (ja) * 1983-04-20 1984-11-05 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JP2023139429A (ja) * 2022-03-22 2023-10-04 三菱電機株式会社 半導体装置の製造方法および半導体製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194423A (ja) * 1983-04-20 1984-11-05 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JP2023139429A (ja) * 2022-03-22 2023-10-04 三菱電機株式会社 半導体装置の製造方法および半導体製造装置

Also Published As

Publication number Publication date
JPH0142127B2 (enrdf_load_stackoverflow) 1989-09-11

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