JPH0142127B2 - - Google Patents
Info
- Publication number
- JPH0142127B2 JPH0142127B2 JP55124823A JP12482380A JPH0142127B2 JP H0142127 B2 JPH0142127 B2 JP H0142127B2 JP 55124823 A JP55124823 A JP 55124823A JP 12482380 A JP12482380 A JP 12482380A JP H0142127 B2 JPH0142127 B2 JP H0142127B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- scanning
- semiconductor layer
- energy beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12482380A JPS5749225A (en) | 1980-09-09 | 1980-09-09 | Single-crystallizing method for non-single crystalline semiconductor layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12482380A JPS5749225A (en) | 1980-09-09 | 1980-09-09 | Single-crystallizing method for non-single crystalline semiconductor layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5749225A JPS5749225A (en) | 1982-03-23 |
| JPH0142127B2 true JPH0142127B2 (enrdf_load_stackoverflow) | 1989-09-11 |
Family
ID=14894982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12482380A Granted JPS5749225A (en) | 1980-09-09 | 1980-09-09 | Single-crystallizing method for non-single crystalline semiconductor layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5749225A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59194423A (ja) * | 1983-04-20 | 1984-11-05 | Agency Of Ind Science & Technol | 半導体結晶層の製造方法 |
| JP7699561B2 (ja) * | 2022-03-22 | 2025-06-27 | 三菱電機株式会社 | 半導体装置の製造方法および半導体製造装置 |
-
1980
- 1980-09-09 JP JP12482380A patent/JPS5749225A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5749225A (en) | 1982-03-23 |