JPS5742148A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5742148A JPS5742148A JP11745880A JP11745880A JPS5742148A JP S5742148 A JPS5742148 A JP S5742148A JP 11745880 A JP11745880 A JP 11745880A JP 11745880 A JP11745880 A JP 11745880A JP S5742148 A JPS5742148 A JP S5742148A
- Authority
- JP
- Japan
- Prior art keywords
- si3n4
- resisting property
- film
- gate
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To obtain the semiconductor device characterized by excellent water resisting property, contamination resisting property, and radiation resisting property, by adopting a double layered Si3N4 structure. CONSTITUTION:An Si3N4 film 13 is layered on a field oxide film 11 of an Si gate MOSFET and a gate oxide film 12 by a CVD method. Then a polycrystalline Si gate 14 and a source and a drain 15 and 16 are formed, and the surface is covered by PSG17. A window is provided, Al wiring 18 is provided, and an Si3N4 film 19 is formed by a plasma CVD method. In this constitution, the underlying Si3N4 film 13 can prevent radiation damage caused by the plasma reaction, and the highly reliable device can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11745880A JPS5742148A (en) | 1980-08-26 | 1980-08-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11745880A JPS5742148A (en) | 1980-08-26 | 1980-08-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5742148A true JPS5742148A (en) | 1982-03-09 |
Family
ID=14712162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11745880A Pending JPS5742148A (en) | 1980-08-26 | 1980-08-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5742148A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02100339A (en) * | 1988-10-06 | 1990-04-12 | Nec Corp | Semiconductor device |
US5618755A (en) * | 1994-05-17 | 1997-04-08 | Fuji Electric Co., Ltd. | Method of manufacturing a polycide electrode |
-
1980
- 1980-08-26 JP JP11745880A patent/JPS5742148A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02100339A (en) * | 1988-10-06 | 1990-04-12 | Nec Corp | Semiconductor device |
US5618755A (en) * | 1994-05-17 | 1997-04-08 | Fuji Electric Co., Ltd. | Method of manufacturing a polycide electrode |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0342796A3 (en) | Thin-film transistor | |
JPS5742148A (en) | Semiconductor device | |
JPS5395582A (en) | Manufacture for semiconductor device | |
JPS5633881A (en) | Manufacture of semiconductor device | |
JPS56165359A (en) | Semiconductor device | |
JPS5558561A (en) | Semiconductor capacitance element | |
JPS5366179A (en) | Semiconductor device | |
JPS5513944A (en) | C-mos semiconductor device | |
JPS53129981A (en) | Production of semiconductor device | |
JPS567482A (en) | Manufacturing of semiconductor device | |
JPS562547A (en) | Electric field effect semiconductor ion sensor | |
JPS57164573A (en) | Semiconductor device | |
JPS56165358A (en) | Semiconductor device | |
JPS55162270A (en) | Semiconductor device | |
JPS5516480A (en) | Insulating gate electrostatic effect transistor and semiconductor integrated circuit device | |
JPS5664460A (en) | Semiconductor device | |
JPS64761A (en) | Semiconductor device | |
JPS5552262A (en) | Mos semiconductor device | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5421180A (en) | Semiconductor device | |
JPS5389375A (en) | Production of semiconductor device | |
JPS5789259A (en) | Semiconductor device | |
JPS54150090A (en) | Manufacture of semiconductor device | |
JPS56104461A (en) | Semiconductor memory device | |
JPS53148983A (en) | Manufacture of semiconductor device |